Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T03:03:26.641Z Has data issue: false hasContentIssue false
  • English
  • Français

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Published online by Cambridge University Press:  19 January 2010

Moumita Mukherjee  and
Sitesh Kumar Roy
Moumita Mukherjee*
Affiliation:
Centre of Millimeter-Wave Semiconductor Devices and Systems (Cmsds, A Joint Venture Between Drdo, Ministry Of Defence, Govt. of India and University of Calcutta), Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India.
Sitesh Kumar Roy
Affiliation:
Centre of Millimeter-Wave Semiconductor Devices and Systems (Cmsds, A Joint Venture Between Drdo, Ministry Of Defence, Govt. of India and University of Calcutta), Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India.
*
Corresponding author: M. Mukherjee Emails: [email protected], [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III–V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0% are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in top-mounted IMPATT, photo-generated leakage current dominated by hole in flip-chip IMPATT has more pronounced effect on the GaN-based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the wide band gap semiconductor has been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high-frequency operation. These results are useful for practical realization of optically controlled GaN-based high-power IMPATTs for application in MM-wave communication systems.

Keywords

III–V GaNFlip-chip diodeTop-mounted diodeIMPATT oscillatorPhoto-illuminationOptical modulationMM-wave window frequencyCarrier ionization coefficient
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 5 , October 2009 , pp. 423 - 429
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Buniatyan, V.V.; Aroutiounian, V.M.: Wide gap semiconductor microwave devices. J. Phys. D: Appl. Phys., 40 (2007), 6355–6385.CrossRefGoogle Scholar
[2]Lee, K.J.; Shin, E.H.; Kim, J.Y.; Oh, T.S.; Lim, K.Y.: Growth of high quality GaN epilayers with Six Ny inserting layer on Si (111) substrate. J. Korean Phys. Soc., 45 (2004), S756–S759.Google Scholar
[3]Vyas, H.P.; Gutmann, R.J.; Borrego, J.M.: The effect of hole versus electron photocurrent on microwave-optical interaction in IMPATT oscillators. IEEE Trans. Electron Devices, ED-26 (1979), 232–234.CrossRefGoogle Scholar
[4]Seeds, A.J.; Forest, J.R.: Optical control of microwave semiconductor device. IEEE Trans. Microwave Theory Tech., 38 (1990), 577.CrossRefGoogle Scholar
[5]Mukherjee, M.; Mazumder, N.; Dasgupta, A.: Simulation experiment on optical modulation of 4H-SiC millimeter-wave high power IMPATT oscillator. J. Eur. Microwave Assoc., 4 (2008), 276–282.Google Scholar
[6]Mukherjee, M.; Mazumder, N.; Roy, S.K.: Prospects of 4H-SiC double drift region IMPATT device as a photo-sensitive high power source at THz regime. Active Passive Electron. Compon., 2008 (2008), 1–9. doi:10.1155/2008/275357.CrossRefGoogle Scholar
[7]Mukherjee, M.; Mazumder, N.: Optically illuminated 4H-SiC THz IMPATT device. Egypt. J. Solids, 30 (2007), 85–102.Google Scholar
[8]Mukherjee, M.; Mazumder, N.: Comparison of photo-sensitivity of Si and InP IMPATT diodes at 220 GHz, in Proc. IEEE Int. Conf. on Microelectronics, Electronics and Electronic Technologies MEET 2007, University of Zagreb, Croatia, 2007, 72–77.Google Scholar
[9]Roy, S.K.; Banerjee, J.P.; Pati, S.P.: A Computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT Diodes, in Proc. 4th Conf. on Numerical Analysis of Semiconductor Devices (NASECODE IV) (Dublin) (Dublin: Boole), 1985, 494–500.Google Scholar
[10]Electronic Archive: New Semiconductor Materials, Characteristics and Properties (Online)www.ioffe.ru/SVA/NSM/Semicond.Google Scholar
[11]Udelson, B.J.; Ward, A.L.: Computer comparison of n+ p p+ and p+ n n+ junction silicon diodes for IMPATT oscillators. Electron. Lett., 7 (1971), 723.CrossRefGoogle Scholar
[12]Banerjee, J.P.; Pati, S.P.; Roy, S.K.: Computer studies on the space charge dependence of avalanche zone width and conversion efficiency of single drift p+ n n+ and n+ p p+ InP IMPATTs. Appl. Phys. A, 35 (1984), 125–129.CrossRefGoogle Scholar
[13]Banerjee, J.P.: Some studies on the DC and high-frequency properties of InP and GaAs IMPATT devices, Ph.D. thesis, University of Calcutta, India, 1984.Google Scholar
[14]Albrecht, J.D.; Wang, R.P.; Ruden, R.P.; Farahmand, M.; Brennan, K.F.: Electron transport characteristics of GaN for high temperature device modeling. J. Appl. Phys., 83 (1998), 4777–4781.CrossRefGoogle Scholar
[15]Kunihiro, K.; Kasahara, K.; Takahashi, Y.; Ohno, Y.: Experimental evaluation of impact ionization coefficients in GaN. IEEE Electron Device Lett., 20 (1999), 608–610.CrossRefGoogle Scholar
[16]Sze, S.M.: Physics of Semiconductor Devices, 2nd ed., Wiley Publishing, New Delhi, 1982.Google Scholar
[17]Scharfetter, D.L.; Gummel, H.K.: Large signal analysis of a silicon read diode oscillator. IEEE Trans. Electron Devices, 16 (1969), 64–77.CrossRefGoogle Scholar
[18]Banerjee, J.P.; Pati, S.P.; Roy, S.K.: A study of indium phosphide single drift and double drift avalanche diodes from computer analysis of field and current profiles. Ind. J. Pure Appl. Phys., 21 (1983), 661–664.Google Scholar
[19]Banerjee, J.P.; Luy, J.F.; Schaffler, F.: Comparison of theoretical and experimental 60 GHz silicon IMPATT diode performances. Electron. Lett., 27 (1991), 1049–1050.CrossRefGoogle Scholar
[20]Eisele, H.; Haddad, G.I.: Microwave Semiconductor Device Physics (Ed. S.M. Sze), Wiley, New York, 1997, 343.Google Scholar
[21]Gilden, M.; Hines, M.E.: Electronic tuning effects in read microwave avalanche diode. IEEE Trans. Electron Devices, ED-13 (1966), 169.CrossRefGoogle Scholar
[22]Pearton, S.J.: GaN and Related Materials II, CRC Press, The Netherland, 2000, 340–343.CrossRefGoogle Scholar