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Novel DC-biasing circuits with arbitrary harmonics-control capability for compact high-efficiency power amplifiers

Published online by Cambridge University Press:  22 April 2019

Shinichi Tanaka ,
Tomoya Oda  and
Kento Saiki
Shinichi Tanaka*
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
Tomoya Oda
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
Kento Saiki
Affiliation:
Graduate School of Science and Engineering, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548, Japan
*
Author for correspondence: S. Tanaka, E-mail: [email protected]
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Abstract

The next generation mobile communication systems impose challenging performance, size, and cost requirements on the power amplifiers (PAs). This paper presents novel DC-biasing circuits, which are compact and yet can control the harmonics almost arbitrarily. The proposed circuit consists of a composite right-/left-handed (CRLH) transmission line (TL) stub, of which the size and harmonics-control function can be tuned by modifying the dispersion diagram of the stub line. As a proof of concept, a compact 2-GHz 7-W GaN HEMT class-F PA using the versatile CRLH-TL stubs was fabricated, demonstrating 85.8% drain efficiency and 77.3% power-added efficiency.

Keywords

Power amplifiersClass-F amplifiersPower-added efficiencyHarmonic tuning techniquesComposite right-/left-handed transmission linesDC-biasing circuitDispersion diagram
Type
EuMW 2018
Information
International Journal of Microwave and Wireless Technologies , Volume 11 , Special Issue 7: MIKON 2018 / EuMW 2018 (Part II) , September 2019 , pp. 618 - 624
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 

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References

1.Colantonio, P, Giannini, F, Giofre, R and Piazzon, L (2009) Theory and experimental results of a Class F AB-C Doherty power amplifier. IEEE Microwave Theory and Techniques 57, 1936–1947.Google Scholar
2.Mokhti, ZA, Tasker, PJ and Lees, J (2014) Using Waveform Engineering to Optimize Class-F Power Amplifier Performance in an Envelope Tracking Architecture. Rome: European Microwave Integrated Circuits Conference.Google Scholar
3.Tanaka, S, Koizumi, S and Saito, K (2016) Compact Harmonic Tuning Circuits for Class-F Amplifiers using Negative Order Resonance Modes of CRLH Stub Lines. London: European Microwave Conference.Google Scholar
4.Tanaka, S, Mukaida, K and Takata, K (2015) Compact stub resonators with enhanced Q-factor using negative order resonance modes of non-uniform CRLH transmission lines. IEICE Transactions on Electronics E98-C, 252–259.Google Scholar
5.Caloz, C and Itoh, T (2006) Electromagnetic Metamaterials: Transmission Line Theory and Microwave Applications. John Wiley & Sons, Inc., Hoboken, New Jersey.Google Scholar
6.Chu, Q-X and Tian, X-K (2010) Design of UWB bandpass filter using stepped-impedance stub-loaded resonator, IEEE Microw. Wireless Components Letters 20, 501–503.Google Scholar
7.Tanaka, S, Saito, K, Oka, T and Shibosawa, Y (2017) Applications of dispersion-engineered composite right-/left-handed transmission line stubs for microwave active circuits. IEICE Transactions on Electronics E100-C, 866–874.Google Scholar
8.Enomoto, J, Ishikawa, R and Honjo, K (2017) Second harmonic treatment technique for bandwidth enhancement of GaN HEMT amplifier with harmonic reactive terminations. IEEE Transactions on Microwave Theory and Techniques 65, 4947–4952.Google Scholar
9.Yao, T, Ishikawa, R and Honjo, K (2013) Frequency Characteristic of Power Efficiency for 10 W/30W-Class 2 GHz Band GaN HEMT Amplifiers with Harmonic Reactive Terminations. Seoul: Asia-Pacific Microwave Conference.Google Scholar
10.Thian, M, Barakat, A and Fusco, V (2015) High-efficiency harmonic-peaking class-E power amplifiers with enhanced maximum operating frequency. IEEE Transactions on Microwave Theory and Techniques 63, 659–671.Google Scholar
11.Wang, Y and Larsen, T (2015) Design of a High-Efficiency GaN HEMT RF Power Amplifier. Iasi: International Symposium on Signals, Circuits and Systems.Google Scholar
12.Chen, K and Peroulis, D (2013) A 3.1-GHz class-F power amplifier with 82% power-added-efficiency, IEEE Microw. Wireless Components Letters 23, 436–438.Google Scholar
13.Watanabe, S, Takatsuka, S, Takagi, K, Kuroda, H and Oda, Y (1996) Effect of source harmonic tuning on linearity of power GaAs FET under class AB operation. IEICE Transactions on Electronics E79-C, 611–616.Google Scholar