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New extraction method of an equivalent circuit for an inductor in BiCMOS technology including lossy effects

Published online by Cambridge University Press:  07 January 2011

Linh Nguyen Tran
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Emmanuelle Bourdel
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Sebastien Quintanel
Affiliation:
ETIS Laboratory, CNRS, ENSEA University of Cergy Pontoise, UMR 8051, 6 avenue du Ponceau 95014 Cergy, France.
Daniel Pasquet*
Affiliation:
LaMIPS, 2 rue de la Girafe, 14079 Caen, France. Phone: +33 6 33 73 64 99
*
Corresponding author: D. Pasquet Email: [email protected]

Abstract

In order to perform an accurate design, in particular in non-linear circuit, the equivalent circuit of inductors must be precisely described in a wide frequency band. Many models have been proposed to describe the behavior of inductors on lossy substrate. They consist of a great number of elements, often suggested by physical phenomena. Most of them cannot be extracted from measurements. In this paper, we propose a model composed only of elements that can be analytically extracted from measurement results.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Yu Cao, R.A. et al. : Frequency-independent equivalent-circuit model for on-chip spiral inductors. IEEE, J. Solid-State Circuits, 38 (3) (2003), 419426.CrossRefGoogle Scholar
[2]Murphy, O.H.; McCarthy, K.G.; Delabie, C.J.P.; Murphy, A.C.; Murphy, P.J.: Design of multiple-metal stacked inductors incorporating an extended physical model. IEEE Trans. Microw. Theory Tech., 53 (6) (2005), 20632072.CrossRefGoogle Scholar
[3]Fujishima, M.; Kino, J.: Accurate subcircuit model of an on-chip inductor with a new substrate network, in Proc. Symp. VLSI Circuits, June 17–19, 2004, 376379.Google Scholar
[4]Ragonese, E.; Biondi, T.; Scuderi, A.; Palmisano, G.: A lumped scalable physics – based model for silicon spiral inductors, in Proc. 10th IEEE Int. Symp. EDMO, November 18–19, 2002, 119124.Google Scholar
[5]Lee, K.Y.; Mohammadi, S.; Bhattacharya, P.K.; Katehi, L.P.B.: Compact models based on transmission-line concept for integrated capacitors and inductors. IEEE Trans. Microw. Theory Tech., 54 (12) (2006), 41414148.CrossRefGoogle Scholar
[6]Hasegawa, H.; Furukawa, M.; Yanai, H.: Properties of microstrip line on Si–SiO2 system. IEEE Trans. Microw. Theory Tech., 19 (11) (1971), 869881.CrossRefGoogle Scholar
[7]Reyes, A.C.; El-Ghazaly, S.M.; Dorn, S.; Dydyk, M.; Schroder, D.K.: Silicon as a microwave substrate, in IEEE MTT-S Int. Microwave Symp. Digest, vol. 3, 1994, 17591762.Google Scholar
[8]Milanovic, V.; Ozgur, M.; DeGroot, D.C.; Jargon, J.A.; Gaitan, M.; Zaghloul, M.E.: Characterization of broadband transmission for coplanar waveguides on CMOS silicon substrate. IEEE Trans. Microw. Theory Tech., 46 (5) (1998), 632640.CrossRefGoogle Scholar
[9]Heinrich, W.: Quasi-TEM description of MMIC coplanar lines including conductor-loss effects. IEEE Trans. Microw. Theory Tech., 41 (1993), 4552.CrossRefGoogle Scholar
[10]Islam, M.S.; Tuncer, E.; Neikirk, D.P.: Accurate quasi-static model for conductor loss in coplanar wave guide, in IEEE MTT-S Int. Microwave Symp. Digest, 1993, 959962.Google Scholar
[11]Pfost, M.; Rein, H.-M.; Holzwarth, T.: Modeling substrate effects in the design of high speed Si-bipolar IC's. IEEE J. Solid-State Circuits, 31 (1996), 14931501.CrossRefGoogle Scholar
[12]Benaissa, K. et al. : RF CMOS on high-resistivity substrate for system-on-chip applications. IEEE Trans. Electron Device Lett., 50 (2003), 567576.CrossRefGoogle Scholar
[13]Chyurm Guo, J.C.; Tan, T.Y.: A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects. IEEE Trans. Electron Device, 53 (3) (2006), 413421.CrossRefGoogle Scholar
[14]Williams, D.F.; Marks, R.B.: LRM probe-tip calibrations using nonideal standards. IEEE Microw. Theory Tech., 43 (1995), 466469.CrossRefGoogle Scholar
[15]Rockwell, S.K.; Bosco, B.A.: On-wafer characterization de-embedding and transmission line optimization on silicon for millimeter-wave applications, in RFIC Symp. Digest Papers, 12–14 June 2005, 561–564.Google Scholar
[16]Ivan, C.H.L.; Minoru, F.: A new on-chip substrate-coupled inductor model implemented with scalable expressions. IEEE, J. Solid-State Circuits, 41 (11) (2006), 24912499.Google Scholar
[17]Adam, C.; Watson, D.M.; Pascale, F.; Kyuwoon, H.; Andreas, W.: A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICS. IEEE Microw. Theory Tech., 52 (3) (2004), 849857.Google Scholar
[18]Nguyen Tran, L.; Pasquet, D.; Bourdel, E.; Quintanel, S.: CAD-oriented model of a coplanar line on a silicon substrate including eddy current effects and skin effect. IEEE Trans. Microw. Theory Tech., 56 (3) (2008), 663670.CrossRefGoogle Scholar
[19]Patrick Yue, C.; Simon Wong, S.: On-chip spiral inductors with patterned ground shields for Si-based RF IC's. IEEE J. Solid-State Circuits, 33 (5) (1998), 743752.Google Scholar
[20]Burghartz, J.N.; Rejaei, B.: On the design of RF spiral inductors on silicon. IEEE Trans. Electron Devices, 50 (3) (2003), 718729.CrossRefGoogle Scholar
[21]Horng, T.S.; Wu, J.M.; Yang, L.Q.; Fang, S.T.: A novel modified-T equivalent circuit for modeling LTCC embedded inductors with a large bandwidth. IEEE Trans. Microw. Theory Tech., 51 (12) (2004), 2327–1333.CrossRefGoogle Scholar
[22]Chao, C.-J.; Wong, S.-C.; Kao, C.-H.; Chen, M.-J.; Leu, L.-Y.; Chiu, K.-Y.: Characterization and modeling of on-chip spiral inductors for Si RFICs. IEEE Trans. Semiconduct. Manufact., 15 (2002), 1929.CrossRefGoogle Scholar
[23]Long, J.R.; Copeland, M.A.: The modeling, characterization, and design of monolithic inductors for silicon RFICs. IEEE J. Solid-State Circuits, 32 (3) (1997), 357369.CrossRefGoogle Scholar
[24]Tai, C.M.; Liao, C.N.: A physical model of solenoid inductors on silicon substrates. IEEE Trans. Microw. Theory Tech, 55 (12) (2007), 25792585.CrossRefGoogle Scholar
[25]Ooi, B.L.; Xu, D.X.; Kooi, P.S.; Lin, F.J.: An improved prediction of series resistance in spiral inductor modeling with eddy-current effect. IEEE Trans. Microw. Theory Tech., 50 (9) (2002), 22022206.Google Scholar
[26]Kim, S.; Neikirk, D.P.: Compact equivalent circuit model for the skin effect. IEEE Trans. Microw. Theory Tech., 44 (6) (1996), 18151818.Google Scholar
[27]Melendy, D.; Francis, P.; Pichler, C.; Hwang, K.; Srinivasan, G.; Weisshaar, A.: A new wideband compact model for spiral inductors in FRICs. IEEE Electron Device Lett., 23 (5) (2005), 273275.CrossRefGoogle Scholar