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Low-power CMOS LNA based on dual resistive-feedback structure with peaking inductor for wideband application

Published online by Cambridge University Press:  23 January 2013

Meng-Ting Hsu*
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
Shih-Yu Hsu
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
Yu-Hwa Lin
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
*
Corresponding author: M.-T. Hsu Email: [email protected]

Abstract

This paper presents a low-power and low-noise amplifier (LNA) with resistive-feedback configuration. The design consists of two resistive-feedback amplifiers. In order to reduce the chip area, a resistive-feedback inverter is adopted for input matching. The output stage adopts basic topology of an RC feedback for output matching, and adds two inductors for inductive peaking at the high band. The implemented LNA has a peak gain of 10.5 dB, the input reflection coefficient S11 is lower than −8 dB and the output reflection S22 is lower than −10.8 dB, and noise figure of 4.2–5.2 dB is between 1 and 10 GHz while consuming 12.65 mW from a 1.5 V supply. The chip area is only 0.69 mm2 and the figure of merit is 6.64 including the area estimation. The circuit was fabricated in a TSMC 0.18 um CMOS process.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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References

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