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GaN digital microwave outphasing PA

Part of: EuMW Special issue 2019

Published online by Cambridge University Press:  27 April 2020

Thomas Hoffmann Open the ORCID record for Thomas Hoffmann [Opens in a new window] ,
Andreas Wentzel Open the ORCID record for Andreas Wentzel [Opens in a new window] ,
Thomas Flisgen ,
Florian Hühn Open the ORCID record for Florian Hühn [Opens in a new window]  and
Wolfgang Heinrich
Thomas Hoffmann*
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Andreas Wentzel
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Thomas Flisgen
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Florian Hühn
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Wolfgang Heinrich
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
*
Author for correspondence: T. Hoffmann, E-mail: [email protected]
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Abstract

This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the FSs and optimized driver circuits for the two GaN push-pull FSs. 3D electromagnetic simulation of output network has been conducted to extract an equivalent circuit model and to access full information in terms of functionality and broadband impedance characteristics for optimized outphasing operation in the final design. Measured total efficiencies (ηtot) of 59 and 25% at 0 and 10 dB power back-off are achieved, respectively, fitting the simulation quite well. The proposed digital outphasing module is a promising candidate for fully digitized base-station architectures in future wireless communications.

Keywords

Digitalpower amplifieroutphasingresonant commutationclass-Dclass-SGaN
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 12 , Special Issue 7: EuMW 2019 Special Issue , September 2020 , pp. 567 - 577
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Copyright
Copyright © Cambridge University Press and the European Microwave Association 2020

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References

http://www.ericsson.com, Ericsson Mobility Report, Ericsson, June 2018.Google Scholar
Nakamizo, H, Mukai, K, Shinjo, S and Gheidi, H (2010) Over 65% PAE GaN voltage-mode class D power amplifier for 465 MHz operation using bootstrap drive. 2015 IEEE PAWR Conf. Dig., San Diego, USA, pp.1–4.Google Scholar
Ma, R (2015) A review of recent development on digital transmitters with integrated GaN switch-mode amplifiers. 2015 IEEE Int. Symposium on RFIT Digest, Sendai, Japan, pp. 73–75.CrossRefGoogle Scholar
Wentzel, A, Chevtchenko, S, Kurpas, P and Heinrich, W (2015) A flexible GaN MMIC enabling digital power amplifiers for the future wireless infrastructure. 2015 IEEE MTT-S IMS Digest, Phoenix, USA, TH2B-5.Google Scholar
Hoffmann, T, Wentzel, A, Hühn, F and Heinrich, W (2017) Novel digital microwave PA with more than 40% PAE over 10 dB power back-off range. 2017 IEEE MTT-S IMS Digest, Honolulu, USA, pp. 2037–2040.CrossRefGoogle Scholar
Kim, CH and Park, B (2016) Fully-integrated two-stage GaN MMIC doherty power amplifier for LTE small cells., IEEE Microwave and Wireless Components Letters 26 pp. 918–920.CrossRefGoogle Scholar
Wolff, N, Heinrich, W, Berroth, M and Bengtsson, O (2016) A three-level class-G modulated 1.85 GHz RF power amplifier for LTE applications with over 50% PAE. 2016 IEEE MTT-S IMS Digest, San Francisco, USA, TU4B-4.Google Scholar
Ding, L, Hur, J, Banerjee, A, Hezar, R and Haroun, B (2015) A 25 dBm outphasing power amplifier with cross-bridge combiners. IEEE Journal of Solid-State Circuits 50, pp 1107–1116.CrossRefGoogle Scholar
Barton, TW (2015) Efficiency first: outphasing architectures for power amplification of high-PAPR signals. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium Digest (CSICS), pp. 1–4.CrossRefGoogle Scholar
Fritzin, J, Svensson, C and Alvandpour, A (2011) A + 32 dBm 1.85 GHz class-D outphasing RF PA in 130 nm CMOS for WCDMA/LTE. 2011 Proceedings of the ESSCIRC (ESSCIRC), pp. 127–130.CrossRefGoogle Scholar
Sen, B (2018) 60 W class S and outphasing hybrid digital transmitter for wireless communication. 2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Anaheim, USA, pp. 14–17.Google Scholar
Hoffmann, T, Wentzel, A, Hühn, F and Heinrich, W (2019) GaN digital outphasing PA. Proceedings of the 49th European Microwave Conference (EuMC) 2019, Paris, France, pp. 551–554.CrossRefGoogle Scholar
Wolff, N, Heinrich, W and Bengtsson, O (2016) Challenges in the design of wideband GaN-HEMT based class-G RF-power amplifiers. 2016 German Microwave Conference (GeMiC) Digest, Bochum, Germany.CrossRefGoogle Scholar
Disserand, A, Bouysse, P, Martin, A, Quéré, R, Jardel, O and Lapierre, L (2016) A new high speed and high efficiency GaN HEMT switching cell for envelope tracking modulators. 2016 46th European Microwave Conference (EuMC), London, pp. 281–284.CrossRefGoogle Scholar
CST STUDIO SUITE (2018) Dassault Systemes Deutschland GmbH, Meitnerstr. 8, 70563 Stuttgart, Germany.Google Scholar
Hühn, F, Wentzel, A and Heinrich, W (2016) A new modulator for digital RF power amplifiers utilizing a wave-table approach. Proceedings of the 46 thEuropean Microwave Conference (EuMC) 2016, London, UK, pp. 839–842.CrossRefGoogle Scholar