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GaN devices for power amplifier design

Published online by Cambridge University Press:  12 May 2009

Teresa M. Martín-Guerrero ,
Damien Ducatteau ,
Carlos Camacho-Peñalosa  and
Christophe Gaquière
Teresa M. Martín-Guerrero*
Affiliation:
Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga, Campus de Teatinos, E-29071 Málaga, Spain. Phone: +34 952133395; Fax: +34 952132027
Damien Ducatteau
Affiliation:
Dépt. Hyperfréquences et Semiconducteurs, Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, Av. Poincaré, BP 69, F-59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197829; Fax: +33 (0)320197888
Carlos Camacho-Peñalosa
Affiliation:
Departamento de Ingeniería de Comunicaciones, E.T.S. Ingeniería de Telecomunicación, Universidad de Málaga, Campus de Teatinos, E-29071 Málaga, Spain. Phone: +34 952133395; Fax: +34 952132027
Christophe Gaquière
Affiliation:
Dépt. Hyperfréquences et Semiconducteurs, Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, Av. Poincaré, BP 69, F-59652 Villeneuve d'Ascq, France. Phone: +33 (0)320197829; Fax: +33 (0)320197888
*
Corresponding author: T.M. Martín-Guerrero E-mail: [email protected]
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Abstract

This paper describes some aspects of the fabrication and modeling of a GaN device to be employed in a power amplifier covering one WiMAX frequency band. The work has been carried out in the frame of the TARGET's NoE work package WiSELPAS. Details concerning the AlGaN/GaN device technology and the performed linear and nonlinear measurements are provided. Since these new devices require specific nonlinear models, a procedure for selecting an appropriate simplified nonlinear model and for extracting its parameters is discussed and evaluated. The developed nonlinear model has been experimentally tested under linear and nonlinear conditions. The agreement between experimental and model-predicted performance suggests that the described model could be useful in a preliminary power amplifier design.

Keywords

Wide-band-gap devicesAlGaN/GaN technologyNonlinear modelPower amplifiers
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 2: TARGET , April 2009 , pp. 137 - 143
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

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