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Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis

Published online by Cambridge University Press:  15 October 2013

Núria Torres Matabosch*
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Fabio Coccetti
Affiliation:
CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France
Mehmet Kaynak
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Beatrice Espana
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
Bernd Tillack
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Jean-Louis Cazaux
Affiliation:
Thales Alenia Space, 26 Avenue Jean-François Champollion, 31037 Toulouse, France
*
Corresponding author: N. Torres Matabosch E-mail: [email protected]

Abstract

An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

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