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Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band

Published online by Cambridge University Press:  12 December 2019

Yibang Wang*
Affiliation:
Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, Hebei, China
Xingchang Fu
Affiliation:
Southeast University, Sipailou Road, Nanjing, Jiangsu, China
Aihua Wu
Affiliation:
Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, Hebei, China
Chen Liu
Affiliation:
Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, Hebei, China
Peng Luan
Affiliation:
Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, Hebei, China
Faguo Liang
Affiliation:
Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, Hebei, China
Wei Zhao
Affiliation:
Xidian University, Xian, Shanxi, China
Xiaobang Shang
Affiliation:
National Physical Laboratory, Hampton Road, Teddington, UK
*
Author for correspondence: Yibang Wang, E-mail: [email protected]

Abstract

We present details of on-wafer-level 16-term error model calibration kits used for the characterization of W-band circuits based on a grounded coplanar waveguide (GCPW). These circuits were fabricated on a thin gallium arsenide (GaAs) substrate, and via holes, were utilized to ensure single mode propagation (i.e., eliminating the parallel-plate mode or surface mode). To ensure the accuracy of the definition for the calibration kits, multi-line thru-reflect-line (MTRL) assistant standards were also fabricated on the same wafer and measured. The same wafer also contained passive and active devices, which were measured subject to both 16-term and conventional line-reflect-reflect-match calibrations. Measurement results show that 16-term calibration kits are capable of determining the cross-talk more accurately. Other typical calibration techniques were also implemented using the standards on the GCPW calibration kits, and were compared with the MTRL calibration using a passive device under test. This revealed that the proposed GCPW GaAs calibration substrate could be a feasible alternative to conventional CPW impedance standard substrates, for on-wafer measurements at W-band and above.

Type
Industrial and Engineering Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019

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References

1.Fitzpatrick, J (1978) Error models for system measurements. Microwave Journal 21, 6366.Google Scholar
2.Doemer, R and Rumiantsev, A (2005) Verification of the wafer-level LRM+ calibration technique for GaAs applications up to 110 GHz. ARFTG Conf. Dig., Washington.Google Scholar
3.Hayden, L (2006) An enhanced line-reflect-reflect-match calibration. 67th ARFTG Conf. Dig., pp. 143149.CrossRefGoogle Scholar
4.Marks, RB (1991) A multiline method of network analyzer calibration. IEEE Transactions on Microwave Theory and Techniques 39, 12051215.CrossRefGoogle Scholar
5.Willimas, DF and Marks, RB (1991) Comparison of on-wafer calibrations. 38th Automatic Radio Frequency Techniques Group Conference Digest. San Diego, CA, USA. 20, 6881.Google Scholar
6.Williams, DF, Corson, P and Sharma, J (2014) Calibrations for millimeter-wave silicon transistor characterization. IEEE Transactions on Microwave Theory and Techniques 3, 658668.CrossRefGoogle Scholar
7.Williams, DF, Young, AC and Urteaga, M (2013) A prescription for sub-millimeter-wave transistor characterization. IEEE Transactions on Terahertz Science and Technology 4, 433439.CrossRefGoogle Scholar
8.Williams, DF, Corson, P and Sharma, J (2013) Calibration-kit design for millimeter-wave silicon integrated circuits. IEEE Transactions on Microwave Theory and Techniques 7, 26852694.CrossRefGoogle Scholar
9.Williams, DF, Schmuckle, FJ and Doerner, R (2014) Crosstalk corrections for coplanar-waveguide scattering-parameter calibrations. IEEE Transactions on Microwave Theory and Techniques 8, 17481761.CrossRefGoogle Scholar
10.Heiliger, HM, Nagel, M, Roskos, HG, Kurz, H, Schnierder, F and Heinrich, W (1997) Thin-film microstrip lines for mm and sub-mm-wave on-chip interconnects. IEEE MTT-S, pp. 421424.CrossRefGoogle Scholar
11.Schmuckle, FJ, Doerner, R, Phung, GN, Heinrich, W, Williams, DF and Arz, U (2011) Radiation, Multimode Propagation, and Substrate Modes in W-band CPW Calibration. IEEE Proceeding of the 41st European Microwave Conference, Manchester.Google Scholar
12.Deal, WR (2008) Coplanar Waveguide Basics for MMIC and PCB Design. IEEE Microwave Magazine, pp. 120133.CrossRefGoogle Scholar
13.Butler, JV, Rytting, D, Iskander, MF, Pollard, RD and Vanden Bossche, M (1991) 16-term error model and calibration procedure for on wafer network analysis measurements [MMICs]. IEEE MTT-S International Microwave Symposium Digest 3, 11251127.Google Scholar
14.Butler, JV, Rytting, D, Iskander, MF, Pollard, RD and Vanden Bossche, M (1991) 16-term error model and calibration procedure for on-wafer network analysis measurements. IEEE Transactions on Microwave Theory and Techniques 12, 22112217.CrossRefGoogle Scholar
15.Williams, DF, Wang, CM and Arz, U (2003) An optimal multiline TRL calibration algorithm. IEEE MTT-S International Microwave Symposium Digest 3, 18191822.Google Scholar
16.Schnieder, F, Tischler, T and Heinrich, W (1991) Modeling dispersion and radiation characteristics of conductor-backed CPW with finite ground width. IEEE Transactions on Microwave Theory and Techniques 1, 137143.Google Scholar
17.Godshalk, EM (1992) Surface wave phenomenon in wafer probing environments. Automat. RF. Techn. Group Microw. Meas. Conf. Dig., Orlando.CrossRefGoogle Scholar
18.Heinrich, W (2003) Quasi-TEM description of MMIC coplanar lines including conductor-lOSS effects. IEEE Transactions on Microwave Theory and Techniques 1, 4552.Google Scholar
19.Microwave Studio (MWS) of CST, Darmstadt, Germany.Google Scholar
20.Williams, DF and Marks, RB (1991) Transmission line capacitance measurement. IEEE Microwave and Guided Wave Letters 1, 243245.CrossRefGoogle Scholar
21.Marks, RB and Williams, DF (1991) Characteristic impedance determination using propagation constant measurement. IEEE Microwave and Guided Wave Letters 1, 141143.CrossRefGoogle Scholar
22.Wincal XE 4.6, Cascade Microtech Inc, US.Google Scholar
23.Liu, S, Ocket, I, Lewandowski, A, Schreurs, D and Nauwelaers, B (2017) An Improved Line-Reflect-Reflect-Match Calibration with an Enhanced Load Model. IEEE Microwave & Wireless Components Letters 27, 9799.Google Scholar