Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-20T01:26:10.526Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of different K-band MEMS phase shifter designs for satellite COTM terminals

Published online by Cambridge University Press:  07 July 2010

P. Farinelli ,
S. Bastioli ,
E. Chiuppesi ,
F. Di Maggio ,
B. Margesin ,
S. Colpo ,
A. Ocera ,
M. Russo  and
I. Pomona
P. Farinelli*
Affiliation:
Department of Electronic and Information Engineering, University of Perugia, Via G. Duranti, 93, 06125 Perugia, Italy.
S. Bastioli
Affiliation:
Department of Electronic and Information Engineering, University of Perugia, Via G. Duranti, 93, 06125 Perugia, Italy.
E. Chiuppesi
Affiliation:
Department of Electronic and Information Engineering, University of Perugia, Via G. Duranti, 93, 06125 Perugia, Italy.
F. Di Maggio
Affiliation:
Selex Communications Spa, Via Sidney Sonnino, 6-95045 Misterbianco, CT, Italy.
B. Margesin
Affiliation:
Memsrad Research Unit, FBK-IRST, Via Somarive 14, 38050 Trento, Italy.
S. Colpo
Affiliation:
Memsrad Research Unit, FBK-IRST, Via Somarive 14, 38050 Trento, Italy.
A. Ocera
Affiliation:
Department of Electronic and Information Engineering, University of Perugia, Via G. Duranti, 93, 06125 Perugia, Italy.
M. Russo
Affiliation:
Selex Communications Spa, Via Sidney Sonnino, 6-95045 Misterbianco, CT, Italy.
I. Pomona
Affiliation:
Selex Communications Spa, Via Sidney Sonnino, 6-95045 Misterbianco, CT, Italy.
*
Corresponding author: Paola Farinelli Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This work presents the design, manufacturing, and testing of three 5-bit K-band Micro-Electro-Mechanical-Systems (MEMS) phase shifters based on similar architectures (combination of switched line and loaded line) but employing different MEMS switch typologies (cantilevers and air bridges) and RF junctions (SP2T and SP4T). All devices have been monolithically manufactured on 200 µm thick high resistivity silicon substrate (4″) by using the Fondazione Bruno Kessler (FBK) RF MEMS process. The performance of the different devices has been compared in order to identify the best configuration to be implemented in electronically steerable phased array antennas for satellite COTM (communication on the move) terminals. Excellent performances were measured for the dielectric-free pad RF MEMS switches as well as the single bits constituting the phase shifter. The three 5-bit devices show return losses better than 15 dB for all states, with average insertion loss of 3.5 dB for the clamped–clamped, SP2T-based design, 2.2 dB for the cantilever, SP2T-based device and 2.1 dB for the cantilever, SP4 T-based design. A low-cost Surface Mountable Technology (SMT) one-level package has been developed as well to allow the phase shifter integration into phased array antennas by using automatic surface mounting techniques. The design and simulation of the SMT package are also presented together with its measured RF performance.

Keywords

Microwave phase shifterElectronic scanning antennasMEMS ohmic switches
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Special Issue 3-4: European Microwave Week 2009 , August 2010 , pp. 263 - 271
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Schoebel, J. et al. : Design considerations and technology assessment of phased-array antenna systems with RF MEMS for automotive radar applications. IEEE Trans. Microw. Theory Tech., 53 (2005), 1968–1975.CrossRefGoogle Scholar
[2]Kim, M. et al. : A DC-to-40 GHz four-bit RF MEMS true-time delay network. IEEE Microw. Wirel. Compon. Lett., 11 (2) (2001), 56–58.CrossRefGoogle Scholar
[3]Tan, G.L. et al. : Low-Loss 2- and 4-bit TTD MEMS phase shifters based on SP4 T switches. IEEE Trans. Microw. Theory Tech., 51 (2003), 297–304.Google Scholar
[4]Pillans, B. et al. : Ka-band RF MEMS phase shifters for phased array applications, in Radio Frequency Integrated Circuits (RFIC) Symp., 2000, IEEE, June 2000, 195–199.Google Scholar
[5]Sundaram, A. et al. : MEMS-based electronically steerable antenna array fabricated using PCB technology. Microelectromech. Syst. J., 17 (2008), 356–362.CrossRefGoogle Scholar
[6]Farinelli, P. et al. : A low contact-resistance winged-bridge RF-MEMS series switch for wide-band applications. Proc. Eur. Microw. Assoc., 3 (2007), 268–278.Google Scholar
[7]Bastioli, S. et al. : Design and manufacturing of a 5-bit MEMS phase shifter at K-band, in EuMW 2008, Amsterdam, October 2008.Google Scholar
[8]Mardivirin, D. et al. : Charging in dielectricless capacitive RF-MEMS Switches. IEEE Trans. Microw. Theory Tech., 57 (1) (2009), 231–236.CrossRefGoogle Scholar
[9]ADS Agilent Momentum www.agilent.comGoogle Scholar
[10]Bahl, I.; Bhartia, P.: Microwave Solid State Circuit Design, Wiley, New York, 1988, 892–896.Google Scholar
[11]Tazzoli, A. et al. : Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress, in ESSDERC/ESSCIRC 2009, Athens 14–18 September 2009.Google Scholar
[12]Rogers Corporation www.rogerscorporation.com/mwu/pdf/5000data.pdfGoogle Scholar
[13]CST Studio www.cst.comGoogle Scholar
[14]www.icmicrowave.comGoogle Scholar
[15]OPTO-I Optoelettronica Italia www.optoi.comGoogle Scholar