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Design of 2N-diode power-combined frequency tripler with coupled suspended striplines

Published online by Cambridge University Press:  23 June 2017

Yinjie Cui ,
Jian Guo ,
Jie Xu ,
Hao Chi Zhang ,
Xiao-Wei Zhu  and
Cheng Qian
Yinjie Cui
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
Jian Guo*
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
Jie Xu
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
Hao Chi Zhang
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
Xiao-Wei Zhu
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
Cheng Qian
Affiliation:
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
*
Corresponding author: J. Guo Email: [email protected]
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Abstract

A novel scheme for power-combined frequency tripler adopting 2N diodes is proposed in this work. Even mode coupled suspended substrate stripline is used to divide and recombine the input and output power. The circuits of the tripler are printed on both sides of the substrate, with N diodes on the front side and the other N diodes on the back side. The front diodes and back diodes are in anti-parallel connection, and DC biased separately to increase the bandwidth and power capacity. Three Q-band prototypes with two, four, and six diodes are fabricated and tested. The output compression powers at output frequency of 43.5 GHz for two/four/six-diode tripler are 9.2, 11, and 12 dBm, respectively. Power capacity is improved with the proposed tripler. Optimum DC bias is also discussed in this work, and it is found that it first increases with drive power, and then drops when large drive power applied because of the increased series resistance of the diode due to high junction temperature.

Keywords

Circuit design and applicationsFilters
Type
Industrial and Engineering Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 9 , November 2017 , pp. 1781 - 1790
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2017 

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References

REFERENCES

[1] Crowe, T.W.; Bishop, W.L.; Porterfield, D.W.; Hesler, J.L.; Weikle, R.M.: Opening the terahertz window with integrated diode circuits. IEEE J. Solid State Circuits, 40 (10) (2005), 2104–2210.CrossRefGoogle Scholar
[2] Maestrini, A. et al. : A 1.7–1.9 THz local oscillator source. IEEE Microw. Wireless Compon. Lett., 14 (6) (2004), 253–255.Google Scholar
[3] Vukusic, J. et al. : HBV tripler with 21% efficiency at 102 GHz. Electron. Lett., 42 (6) (2006), 355–356.Google Scholar
[4] Maestrini, A. et al. : A 540–640-GHz high-efficiency four-anode frequency tripler. IEEE Trans. Microw. Theory Tech., 53 (9) (2005), 2835–2843.Google Scholar
[5] Chen, Z.H.; Xu, J.P.: Design and characterization of a W-band power-combined frequency tripler for high-power tripler for high-power and broadband operation. Prog. Electromagn. Res., 134 (2013), 133–150.Google Scholar
[6] Maestrini, A.; Ward, J.; Chattopadhyay, G.; Schlecht, E.; Mehdi, I.: Terahertz source based on frequency multiplication and their applications. J. RF Eng. Telecommun., 62 (5/6) (2008), 118–122.Google Scholar
[7] Kirby, P.L.; Li, Y.; Xiao, Q.; Hesler, J.L.; Papapolymerou, J.: Power combining multiplier using HBV diodes at 260 GHz, in Asia-Pacific Microwave Conference, Macau, December 2008, 16–20.Google Scholar
[8] Maestrini, A. et al. : In-phase power-combined frequency triplers at 300 GHz. IEEE Microw. Wireless Compon. Lett., 18 (3) (2008), 218–220.CrossRefGoogle Scholar
[9] Deng, J.Q.; Jiang, W.S.; Ning, Y.M.: Analysis and design of a novel high-power W-band spatial multilayer doubler. Appl. Mech. Mater., 130/134 (2012), 529–533.Google Scholar
[10] Fu, J.S.; Lu, C.; Kwok, B.C.; Lee, W.Y.: Suspended substrate stripline structures evaluation for millimeter-wave circuits application, in SPIE proceedings, April 2001, 4407, 24–34.Google Scholar
[11] Siles, J.V. et al. : A single-waveguide in-phase power-combined frequency doubler at 190 GHz. IEEE Microw. Wireless Compon. Lett., 21 (6) (2011), 332–334.Google Scholar
[12] Oswald, J.E.; Siegel, P.H.: The application of the FDTD method to millimeter-wave filter circuits including the design and analysis of a compact coplanar strip filter for THz frequencies, in IEEE MTT-S International Microwave Symposium Digest, San Diego, CA, USA, vol. 1, 1994, 309–312.Google Scholar
[13] Guo, J.; Xu, J.; Cui, Y.J.; Xu, Z.B.; Qian, C.: Q-band waveguide-to-suspended-stripline transition with DC/IF return path, in Asia-Pacific Microwave Conference, Sendai, Japan, November 2014, 283–285.Google Scholar
[14] Tang, A.Y. et al. : Electro-thermal model for multi-anode Schottky diode multipliers. IEEE Trans. Terahertz Sci. Technol., 2 (3) (2012), 290–298.Google Scholar
[15] Faber, M.T.; Chramiec, J.; Adamski, M.E.: Microwave and Millimeter-Wave Diode Frequency Multipliers, Artech House, Boston, London, 1995, 7–21.Google Scholar
[16]Biasing VDI's GaAs Varactor Frequency Doublers. http://vadiodes.com/VDI/pdf/Biasing%20Notes.pdf (accessed April 2013).Google Scholar
[17] Tang, A.Y.; Stake, J.: Impact of eddy currents and crowding effects on high frequency losses in planar Schottky diodes. IEEE Trans. Electron Devices, 58 (10) (2011), 3260–3269.CrossRefGoogle Scholar
[18] Tang, A.Y.: Modelling and Characterisation of Terahertz Planar Schottky Diodes. PhD thesis, Chalmers University, Goteborg, Sweden, 2013, 18–21.Google Scholar
[19] Chen, Z.H.; Xu, J.P.: Design of a V-band single-substrate single-waveguide power-combined frequency doubler covering 50–75 GHz band, in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, Nanjing, China, September 2012, 1–4.Google Scholar
[20] Guo, J.; Xu, J.; Qian, C.: A new scheme for the design of balanced frequency tripler with Schottky diodes. Prog. Electromagn. Res., 137 (2013), 407–424.Google Scholar