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Behavioral modeling of RF power amplifiers using a time-domain characterization approach

Published online by Cambridge University Press:  04 April 2025

J. Ortali Open the ORCID record for J. Ortali [Opens in a new window] ,
S. Mons ,
T. Reveyr ,
E. Ngoya  and
C. Mazière
J. Ortali*
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
S. Mons
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
T. Reveyr
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
E. Ngoya
Affiliation:
XLIM – CNRS, 123 avenue Albert Thomas, Limoges, France
C. Mazière
Affiliation:
AMCAD ENGINEERING, 20 rue d’Atlantis, Limoges, France
*
Corresponding author: J. Ortali; Email: [email protected]
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Abstract

In this article, we discuss the behavioral modeling of the power amplifier (PA) for system-level simulations through its most advanced approach, named TPM model, based on a simplification of the Volterra series following the method of separation of the low and high frequency memory effects present in PA. The model, relying on frequency domain CW characterization of the PA, shows a limitation when applied to high-power radar applications, for which this article investigates an alternate solution based on time-domain pulsed RF characterization.

Keywords

Behavioral modelingcomputer-aided designpower amplifiers
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , First View , pp. 1 - 8
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Copyright
© The Author(s), 2025. Published by Cambridge University Press in association with The European Microwave Association.

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References

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