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A 60 GHz 14 dBm power amplifier with a transformer-based power combiner in 65 nm CMOS

Published online by Cambridge University Press:  08 April 2011

Dixian Zhao ,
Ying He ,
Lianming Li ,
Dieter Joos ,
Wim Philibert  and
Patrick Reynaert
Dixian Zhao
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Ying He
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Lianming Li
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
Dieter Joos
Affiliation:
ST-Ericsson, Excelsiorlaan 44-46, 1930, Zaventem, Belgium
Wim Philibert
Affiliation:
ST-Ericsson, Excelsiorlaan 44-46, 1930, Zaventem, Belgium
Patrick Reynaert*
Affiliation:
ESAT-MICAS, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B3001 Leuven, Belgium. Phone: + 32 16 321975
*
Corresponding author: P. Reynaert Email: [email protected]
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Abstract

A 52–61 GHz power amplifier (PA) is implemented in 65 nm bulk complementary metal oxide semiconductor (CMOS) technology. The proposed PA employs a transformer-based power combiner to sum the output power from two unit PAs. Each unit PA uses transformer-coupled two-stage differential cascode topology. The differential cascode PA is able to increase the output power and ensure stability. The transformer-based passives enable a compact layout with the PA core area of only 0.3 mm2. The PA achieves a peak power gain of 10.2 dB with 3-dB bandwidth of 9 GHz. The measured saturated output power is 14.8 dBm with a peak power-added efficiency (PAE) of 7.2%. The reverse isolation is smaller than −33 dB from 25 to 65 GHz. The PA consumes a quiescent current of 143 mA from a 1.6 V supply.

Keywords

power amplifierscascode stagedifferential signallingtransformerpower combinerCMOS60 GHz
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 2: 60 GHz Wireless Communication Circuits and Systems , April 2011 , pp. 99 - 105
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]IEEE 802.15 Working Group: Wireless PAN Task Group 3c. Millimeter wave alternative PHY [Online], 2009. Available: http://www.ieee802.org/15/pub/TG3c.html.Google Scholar
[2]IEEE 802.11 Working Group: Very high throughput in 60 GHz [Online]. Available: http://www.ieee802.org/11/Reports/tgad_update.htm.Google Scholar
[3]Wireless Gigabit Alliance: WiGig White Paper [Online]. Available: http://wirelessgigabitalliance.org/specifications/.Google Scholar
[4]Doan, C.H.; Emami, S.; Niknejad, A.M.; Brodersen, R.W.: Millimeter-wave CMOS design. IEEE J. Solid-State Circuits, 40 (2005), 144–155.CrossRefGoogle Scholar
[5]Razavi, B.: A millimeter-wave CMOS heterodyne receiver with on-chip LO and divider. IEEE J. Solid-State Circuits, 43 (2008), 477–485.CrossRefGoogle Scholar
[6]Chowdhury, D.; Reynaert, P.; Niknejad, A.M.: A 60 GHz 1 V + 12.3dBm transformer-coupled wideband PA in 90 nm CMOS, in ISSCC Dig. Tech. Papers, San Francisco, 2008.Google Scholar
[7]Chan, W.L.; Long, J.R.; Spirito, M.; Pekarik, J.J.: A 60 GHz-band 1 V 11.5dBm power amplifier with 11% PAE in 65 nm CMOS, in ISSCC Dig. Tech. Papers, San Francisco, 2009.Google Scholar
[8]Siligaris, A. et al. : A 60 GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65 nm SOI, in Proc. of ESSCIRC, Athens, 2009.Google Scholar
[9]Law, C.; Pham, A.: A high-gain 60 GHz power amplifier with 20dBm output power in 90 nm CMOS, in ISSCC Dig. Tech. Papers, San Francisco, 2010.Google Scholar
[10]Boers, M.: A 60 GHz transformer coupled amplifier in 65 nm digital CMOS, in Proc. of RFIC, Anaheim, 2010.Google Scholar
[11]Reynaert, P.; Niknejad, A.M.: Power combining techniques for RF and mm-wave CMOS power amplifiers, in Proc. of ESSCIRC, Munich, 2007.Google Scholar
[12]Law, C.Y.; Pham, A.V.: A high-gain 60 GHz power amplifier with 20dBm output power in 90 nm CMOS, in ISSCC Dig. Tech. Papers, San Francisco, 2010.Google Scholar
[13]He, Y.; Li, L.; Reynaert, P.: 60 GHz power amplifier with distributed active transformer and local feedback, in Proc. of ESSCIRC, Sevilla, 2010.Google Scholar
[14]Aoki, I. et al. : A fully-integrated quad-band GSM/GPRS CMOS power amplifier. IEEE J. Solid-State Circuits, 43 (2008), 2747–2758.CrossRefGoogle Scholar
[15]Stephens, D.; Vanhoucke, T.; Donkers, J.: RF reliability of short channel NMOS devices, in Proc. of RFIC, Boston, 2009.Google Scholar
[16]Aoki, I.; Kee, S.D.; Rutledge, D.B.; Hajimiri, A.: Fully integrated CMOS power amplifier design using the distributed active-transformer architecture. IEEE J. Solid-State Circuits, 37 (2002), 371–383.CrossRefGoogle Scholar
[17]Cheung, T.S.D.; Long, J.R.: A 21–26-GHz SiGe bipolar power amplifier MMIC. IEEE J. Solid-State Circuits, 40 (2005), 2583–2597.CrossRefGoogle Scholar
[18]Cheung, T.S.D.; Long, J.R.: Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits. IEEE J. Solid-State Circuits, 41 (2006), 1183–1200.CrossRefGoogle Scholar