Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-26T13:04:09.910Z Has data issue: false hasContentIssue false
  • English
  • Français

A 280 W LDMOS broadband Doherty PA with 52% of fractional bandwidth based on a multi-line impedance inverter for DVB-T applications

Published online by Cambridge University Press:  07 April 2016

Alessandro Cidronali ,
Niccolò Giovannelli ,
Stefano Maddio ,
Andrea Del Chiaro ,
Christian Schuberth ,
Thomas Magesacher  and
Peter Singerl
Alessandro Cidronali*
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3 50139 Florence, Italy. Phone: +39.055. 2758543
Niccolò Giovannelli
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
Stefano Maddio
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3 50139 Florence, Italy. Phone: +39.055. 2758543
Andrea Del Chiaro
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
Christian Schuberth
Affiliation:
Infineon Technologies Austria AG, Villach 9500, Austria
Thomas Magesacher
Affiliation:
Department of Electrical and Information Technology, Lund University, Lund, Sweden
Peter Singerl
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
*
Corresponding author:A. Cidronali Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

We introduce a new technique for the design of an output combiner for Doherty power amplifier (DPA) and its effective exploitation for the development of a wideband laterally diffused metal oxide semiconductor (LDMOS) DPA. The design is enabled by a two-line impedance inverter for the DPA back-off operation, which is capable of 52% of fractional bandwidth. The technique is validated by the development of a DPA prototype for Ultra high frequency terrestrial digital video broadcast (DVB-T) applications, with optimized peak power and efficiency over 470–806 MHz. The prototype delivers between 40 and 53% of average efficiency across the band, at 49 dBm output power in average across the bandwidth, and supporting DVB-T signals with 8 MHz bandwidth and a peak-to-average power ratio of 10.5 dB. It achieves the target adjacent channel power ratio of −52 dBc at 750 MHz if digital pre-distortion is applied, and provides 47.8 dBm of output power with a drain efficiency of 44.3%.

Keywords

Broadband PALDMOSDoherty power amplifierDVB-T
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 8 , December 2016 , pp. 1141 - 1153
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kim, B.; Junghwan, M.; Kim, I.: Efficiently amplified. IEEE Microw. Mag., 5 (2010), 87–100.Google Scholar
[2] Cripps, S.C.: RF Power Amplifiers for Wireless Communications, Artech House, Norwood, MA, 2006.Google Scholar
[3] Cidronali, A.; Mercanti, M.; Giovannelli, N.; Maddio, S.; Manes, G.: On the signal probability distribution conscious characterization of GaN devices for optimum envelope tracking PA design. IEEE Microw. Wireless Comp. Lett., 7 (2013), 380–382.Google Scholar
[4] Cidronali, A.; Giovannelli, N.; Magrini, I.; Manes, G.: Compact concurrent dual-band power amplifier for 1.9 GHz WCDMA and 3.5 GHz OFDM wireless systems, in Proc. of the 38th European Microwave Conf., 2008, 518–521.Google Scholar
[5] Cidronali, A.; Giovannelli, N.; Mercanti, M.; Maddio, S.; Manes, G.: Concurrent dual-band envelope tracking GaN PA design and its 2D shaping function characterization. Int. J. Microw. Wireless Technol., 6 (2013), 669–681.Google Scholar
[6] Kim, B. et al. : Push the envelope: design concepts for envelope-tracking power amplifiers. IEEE Microw. Mag., 3 (2013), 68–81.CrossRefGoogle Scholar
[7] Cidronali, A.; Giovannelli, N.; Vlasits, T.; Hernaman, R.; Manes, G.: A 240 W dual-band 870 and 2140 MHz envelope tracking GaN PA designed by a probability distribution conscious approach, in IEEE MTT-S Int. Microwave Symp., Baltimore, MD, 2011, 1–4.Google Scholar
[8] Kim, B.; Kim, J.; Kim, I.; Ha, J.: The Doherty power amplifier. IEEE Microw. Mag., 5 (2006), 42–50.CrossRefGoogle Scholar
[9] Ladebusch, U.; Liss, C.A.: Terrestrial DVB (DVB-T): a broadcast technology for stationary portable and mobile use. IEEE Proc., 1 (2006), 183–193.Google Scholar
[10] Bathich, K.; Boeck, G.: Design and analysis of 80-W wideband asymmetrical Doherty amplifier. Int. J. Microw. Wireless Technol., 7.01 (2015), 13–18.Google Scholar
[11] Piazzon, L.; Giofre, R.; Colantonio, P.; Giannini, F.: A wideband Doherty architecture with 36% of fractional bandwidth. IEEE Microw. Wireless Comp. Lett., 11 (2013), 626–628.Google Scholar
[12] Chuanhui, M.; Wensheng, P.; Shihai, S.; Chaojin, Q.; Youxi, T.: A wideband Doherty power amplifier with 100 MHz instantaneous bandwidth for LTE-advanced applications. IEEE Microw. Wireless Comp. Lett., 11 (2013), 614–616.Google Scholar
[13] Moronval, X.; Abdoelgafoer, R.; Déchansiaud, A.: MMIC-based asymmetric Doherty power amplifier for small cells applications. Int. J. Microw. Wireless Technol., 7 (5) (2015), 499–505.Google Scholar
[14] Theeuwen, S.J.C.H.; Qureshi, J.H.: LDMOS technology for RF power amplifiers. IEEE Trans. Microw. Theory Tech., 6 (2012), 1755–1763.Google Scholar
[15] Giovannelli, N. et al. : A 250 W LDMOS Doherty PA with 31% of fractional bandwidth for DVB-T applications, in IEEE MTT-S Int. Microwave Symp., Tampa, FL, 2014, 1–4.Google Scholar
[16] Qureshi, J.H.; Li, N., Neo, W.C.E.; van Rijs, F.; Blednov, I.; de Vreede, L.C.N.: A wide-band 20 W LMOS Doherty power amplifier, in IEEE MTT-S Int. Microwave Symp., Anaheim, CA, 2010, 1–4.Google Scholar
[17] Kang, D.; Kim, D.; Cho, Y.; Park, B.; Kim, Y.; Kim, B.: Design of bandwidth-enhanced Doherty power amplifiers for handset applications. IEEE Trans. Microw. Theory Tech., 12 (2011), 3474–3483.Google Scholar
[18] Yu-Ting, D.; Annes, J.; Bokatius, M.; Kravavac, P.H.; Tucker, G.: A 350 W, 790 to 960 MHz wideband LDMOS Doherty amplifier using modified combining scheme, in IEEE MTT-S Int. Microwave Symp., Tampa, FL, 2014, 1–4.Google Scholar
[19] Qureshi, J.H.; Sneijers, W.; Keenan, R.; de Vreede, L.C.N.; van Rijs, F.: A 700-W peak ultra-wideband broadcast Doherty amplifier, in IEEE MTT-S Int. Microwave Symp., Tampa, 2014, 1–4.Google Scholar
[20] Gustafsson, D.; Andersson, C.M.; Fager, C.: A modified Doherty power amplifier with extended bandwidth and reconfigurable efficiency. IEEE Trans. Microw. Theory Tech., 1 (2013), 533–542.Google Scholar
[21] Ahmed, A. et al. : A 350 W, 2 GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65 MHz envelope signal, in IEEE MTT-S Int. Microwave Symp., Montreal, CA, 2012, 1–4.Google Scholar
[22] Fagotti, R.; Cidronali, A.; Manes, G.: Concurrent hex-band GaN power amplifier for wireless communication systems. IEEE Microw. Wireless Comp. Lett., 2 (2011), 89–91.Google Scholar
[23] Morgan, D.R.; Ma, Z.; Kim, J.; Zierdt, M.G.; Pastalan, J.: A generalized memory polynomial model for digital predistortion of RF power amplifiers. IEEE Trans. Signal Process., 54 (10) (2006), 3852–3860.Google Scholar