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Phosphorus diffusion in silicon
Published online by Cambridge University Press: 16 July 2009
Abstract
Phosphorus diffusion in silicon shows a number of anomalous effects, and we apply asymptotic methods to a model problem which includes most of these. Both constant surface concentration problems and the diffusion of implanted dopant are considered. An unusual feature of the model is the non-local dependence of the tail diffusivity on the peak concentration.
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- Copyright © Cambridge University Press 1990
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