Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-23T08:58:22.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Explicit solutions for LBIC signals in semiconductors by asymptotic method

Published online by Cambridge University Press:  26 September 2008

Ellis Cumberbatch  and
Weifu Fang
Ellis Cumberbatch
Affiliation:
Department of Mathematics, The Claremont Graduate School, Claremont, CA 91711, USA
Weifu Fang
Affiliation:
Department of Mathematics, West Virginia University, Morgantown, WV 26506, USA
Get access Rights & Permissions [Opens in a new window]

Abstract

A non-destructive testing technique to obtain information on the electrical structure in semiconductor materials involves traversing the material surface with a laser beam, and measuring induced currents generated by the beam's interaction with the electrical field. A mathematical model has been established, and the inverse problem of reconstructing the electrical structure from the current image has been studied. Here we obtain explicit solutions for simple structures (p–n and p–n–p junctions) in the asymptotic limit of strong doping. Comparison with numerical results show that the asymptotic solutions are quite accurate. These solutions may provide a quick way to identify the doping profile by matching actual current signals to a class of simple functions.

Type
Research Article
Information
European Journal of Applied Mathematics , Volume 7 , Issue 4 , August 1996 , pp. 383 - 393
Copyright
Copyright © Cambridge University Press 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1]Bajaj, J., Bubulac, L. O., Newman, P. R., Tennant, W. E. & Racrah, P. M. (1988) Spatial mapping of electrically active defects in HgCdTe using laser beam induced current. J. Vac. Sci. Tech. A5, 3186–3189.Google Scholar
[2]Bajaj, J. & Tennant, W. E. (1990) Remote contact LBIC imaging of defects in semiconductors. J. Crystal Growth 103, 170–178.CrossRefGoogle Scholar
[3]Bajaj, J., Tennant, W. E. & Newman, P. R. (1988) Laser beam induced current imaging of surface nonuniformity at the HgCdTe/ZnS interface. J. Vac. Sci. Tech. A6, 2757–2759.CrossRefGoogle Scholar
[4]Busenberg, S., Fang, W. & Ito, K. (1993) Modeling and analysis for laser beam induced current images in semiconductors. SIAM J. Appl. Math. 53, 187–204.CrossRefGoogle Scholar
[5]Fang, W. & Ito, K. (1992) Identifiability of semiconductor defects from LBIC images. SIAM J. Appl. Math. 52, 1611–1626.CrossRefGoogle Scholar
[6]Fang, W. & Ito, K. (1994) Reconstruction of semiconductor doping profile from LBIC image. SIAM J. Appl. Math. 54, 1067–1082.Google Scholar
[7]Please, C. P. (1982) An analysis of semiconductor P–N junctions. IMA J. Appl. Math. 28, 301–318.CrossRefGoogle Scholar