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Crystallinity estimation of area-selective Ge epitaxial layer grown on Si substrate by means of high-resolution X-ray microdiffraction
Published online by Cambridge University Press: 16 November 2010
Abstract
Crystallinity of area-selective Ge layer with a (0 0 1) surface grown on Si substrate has been investigated by means of diffractometry using a parallel X-ray microbeam. The measured lattice parameters of 〈0 0 1〉 direction were about 0.17% smaller than that of bulk Ge crystal. This tensile strain value was almost the same as the simulated ones that used the finite-element method.
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