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Monte Carlo Simulations Of Elastic Scattering With Applications To Dc And High Power Pulsed Magnetron Sputtering For Ti3SIC2

Published online by Cambridge University Press:  20 August 2015

Jürgen Geiser  and
Sven Blankenburg
Jürgen Geiser*
Affiliation:
Department of Mathematics, Humboldt-Universität zu Berlin, D-10099 Berlin, Germany
Sven Blankenburg*
Affiliation:
Department of Physics, Humboldt-Universität zu Berlin, D-10099 Berlin, Germany
*
Corresponding author.Email:[email protected]
Email:[email protected]
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Abstract

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and tar-get collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS.

Keywords

80M3160J2065N7465C0565C3565C40DC sputteringMAX-phasesmean free pathparticle in cell Monte Carlo collisionsMonte Carlo Markov chain
Type
Research Article
Information
Communications in Computational Physics , Volume 11 , Issue 5 , May 2012 , pp. 1618 - 1642
Copyright
Copyright © Global Science Press Limited 2012

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References

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