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A Cluster Dynamics Model For Accumulation Of Helium In Tungsten Under Helium Ions And Neutron Irradiation

Published online by Cambridge University Press:  20 August 2015

Y. G. Li*
Affiliation:
Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
W. H. Zhou*
Affiliation:
Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
R. H. Ning*
Affiliation:
Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
L. F. Huang*
Affiliation:
Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
Z. Zeng*
Affiliation:
Key Laboratory for Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
X. Ju*
Affiliation:
Department of Physics, University of Science and Technology Beijing, Beijing 100083, China
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Abstract

A cluster dynamics model based on rate theory has been developed to describe the accumulation and diffusion processes of helium in tungsten under helium implantation alone or synergistic irradiation with neutron, by involving different types of objects, adopting up-to-date parameters and complex reaction processes as well as considering the diffusion process along with depth. The calculated results under different conditions are in good agreement with experiments much well. The model describes the behavior of helium in tungsten within 2D space of defect type/size and depth on different ions incident conditions (energies and fluences) and material conditions (system temperature and existent sinks), by including the synergistic effect of helium-neutron irradiations and the influence of inherent sinks (dislocation lines and grain boundaries). The model, coded as IRadMat, would be universally applicable to the evolution of defects for ions/neutron irradiated on plasma-facing materials.

Type
Research Article
Copyright
Copyright © Global Science Press Limited 2012

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