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Analytical Study on Piezoelectric Effects on Exciton Dissociation

Published online by Cambridge University Press:  22 June 2016

SeongMin Kim ,
Jaewook Ha ,
Hyeok Kim  and
Jin-Baek Kim
SeongMin Kim*
Affiliation:
The Office of the Theory & Modeling Based Design of Energy Harvesting (private lab), Maetan 3-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-373, Korea
Jaewook Ha*
Affiliation:
Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
Hyeok Kim*
Affiliation:
Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Jin-Baek Kim*
Affiliation:
Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
*
*Corresponding author. Email addresses:[email protected] (S. M. Kim), [email protected] (J. Ha), [email protected] (H. Kim), [email protected] (J.-B. Kim)
*Corresponding author. Email addresses:[email protected] (S. M. Kim), [email protected] (J. Ha), [email protected] (H. Kim), [email protected] (J.-B. Kim)
*Corresponding author. Email addresses:[email protected] (S. M. Kim), [email protected] (J. Ha), [email protected] (H. Kim), [email protected] (J.-B. Kim)
*Corresponding author. Email addresses:[email protected] (S. M. Kim), [email protected] (J. Ha), [email protected] (H. Kim), [email protected] (J.-B. Kim)
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Abstract

We analytically and numerically compute the Onsager dissociation rate (exciton dissociation) on an interface induced by a piezoelectric potential in an inorganicorganic hybrid p-n junction system (ZnO + (poly(p-phenylene vinylene)); PPV). When a positive piezoelectric potential is created at the interface region owing to the deformation of the system, free electrons accumulate at the interface. Hence, screening effects are observed. It is assumed that the electron layer formed at the interface then attracts free holes from the p-type PPV region, which leads to exciton formation, possibly via the Langevin recombination process. The increased exciton density can then contribute to the Onsager dissociation rate, which is maximum around the interface. This paper focuses on the role of piezoelectric effects in promoting exciton formation at the interface and its relation with the exciton dissociation rate.

Keywords

Exciton dissociationOnsager ratepiezoelectricp-n junctionrecombination
Type
Research Article
Information
Communications in Computational Physics , Volume 20 , Issue 1 , July 2016 , pp. 179 - 187
Copyright
Copyright © Global-Science Press 2016 

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