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Vermiculitization of smectite interfaces and illite layer growth as a possible dual model for illite-smectite illitization in diagenetic environments: a synthesis

Published online by Cambridge University Press:  09 July 2018

A. Meunier ,
B. Lanson  and
D. Beaufort
A. Meunier*
Affiliation:
University of Poitiers, CNRS UMR 6532, 40 avenue du Recteur Pineau, 86022 Cedex, France
B. Lanson
Affiliation:
Environmental Geochemistry Group, LGIT-IRIGM, University J. Fourier - CNRS, BP 53, 38041 Grenoble Cedex 9, France
D. Beaufort
Affiliation:
University of Poitiers, CNRS UMR 6532, 40 avenue du Recteur Pineau, 86022 Cedex, France
*
*E-mail: [email protected]
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Abstract

A structural model is proposed for illite-smectite (I-S) from diagenetic environments which accounts for the presence of three different layer types which are defined as follows: montmorillonite (low-charge, octahedrally substituted, fully expandable), vermiculite (high-cha rge, octa- and tetrahed rally substitut ed, only partly expandabl e) and illite (K0.9Si3.3Al0.7R1.83+R0.22+O10(OH)2). All three layers may be found within the MacEwan crystallites, whereas external edges of the crystallites are only vermiculitic during the illitization process. In the proposed model, a layer is defined symmetrically on each side of the interlayer space, leading to the existence of polar 2:1 units. It is proposed that the I-S growth is a three step mechanism: (1) formation, from sediments of variable composition, of montmorillon ite crystallites; (2) vermiculitization of the montmorillonite crystallite interfaces and of inner montmorillonite layers; and (3) precipitation of illite of fixed chemical composition. The I-S crystal grows by addition of illite layers linked by K+ or NH4+ ions saturating the vermiculitic interfaces.

Keywords

montmorillonitevermiculiteillite-smectiteillitizationcrystal growth
Type
Research Article
Information
Clay Minerals , Volume 35 , Issue 3 , June 2000 , pp. 573 - 586
Copyright
Copyright © The Mineralogical Society of Great Britain and Ireland 2000

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