Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-16T19:21:11.384Z Has data issue: false hasContentIssue false

Separation of Txrf Peaks and Background Using a Spreadsheet

Published online by Cambridge University Press:  06 March 2019

D. B. Brown
Affiliation:
Naval Research Laboratory, Washington, DC 20375
B. Cordis
Affiliation:
Ibis Technology, Danvers, MA 01923
J. V. Gilfrict
Affiliation:
SFA, Inc., Landover, MD 20785
CM. Dozier
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Get access

Abstract

In TXRF analysis of impurities in Si wafers, one of the analytical problems is the separation of the peaks of interest (e.g., fluorescence peaks from Fe or Cr) from various background artifacts. These background artifacts include (a) a large Si Kα fluorescence peak, (b) a large peak from the scattered and diffracted primary beam (e.g., W Lβ), (c) a continuum background, (d) scattered radiation in the vicinity of the primary beam peak, (e) an escape peak from the primary beam peak, and (f) spurious Fe and Ni peaks from the detector. This paper will present a scheme for the separation of these components using a fitting procedure based on a commercial spreadsheet.

Type
Research Article
Copyright
Copyright © International Centre for Diffraction Data 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. WeisDrod, U., Gutschke, R., Kirath, J., and Schwenke, H., “Total Reflection X-Ray Fluorescence Spectrometry for Quantitative Surface and Layer Analysis”, Applied Physics A53, 449-456 (1991).Google Scholar
2. Knoth, J., Schwenke, H., and Weisbrod, U. , “Total reflection X-ray fluorescence spectrometry for surface analysis”, Spectrochernica Acta, Vol 44B, 477-481 (1989).Google Scholar
3. Yakushiji, Kenji, Ohkawa, Shinji, Yoshinaga, Atsushi, and Harada, Jimpei , “Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)”, Jpn. J. Appl. Phys. 31, 28722876 (1992).Google Scholar
4. See, for example, the discussion of pulse pile-up and the action of the pile-up rejector in Quantitative X-Ray Spectrometry, by Ron Jenkins, Gould, R. W., and Dale Gedcke (Marcel Dekker, New York, 1981).Google Scholar
5. Yakushiji, Kenji, Ohkawa, Shinji, Yoshinaga, Atsushi, and Harada, Jimpei, “Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (II)”, Jpn. J. Appl. Phys. 32, 11911196 (1993).Google Scholar
6. Private communication, J. Metz, Charles Evans, Inc.Google Scholar