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Residual Stress of Aluminum Thin Films Sputtered on Silicon Wafers Measured by X-Ray Diffraction

Published online by Cambridge University Press:  06 March 2019

Keisuke Tanaka ,
Keisaku Ishihara  and
Yoshiaki Akiniwa
Keisuke Tanaka
Affiliation:
Department of Mechanical Engineering Nagoya University Chikusa-ku, Nagoya, 464-01, Japan
Keisaku Ishihara
Affiliation:
Department of Mechanical Engineering Nagoya University Chikusa-ku, Nagoya, 464-01, Japan
Yoshiaki Akiniwa
Affiliation:
Department of Mechanical Engineering Nagoya University Chikusa-ku, Nagoya, 464-01, Japan
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Abstract

A new method of the X-ray stress measurement was proposed for measuring the residual stress in Al thin films having the [111] fiber texture with the fiber axis perpendicular to the film surface. The strain was measured from Al 222 and 311 diffractions obtained by Cr-Kα radiation. The values of in-plane residual stresses σ11, σ22 and σ12, and out-of-plane normal residual stress, σ33 were determined from the measured strains by using the fundamental formulae derived on the basis of Reuss and Voigt models. The measured residual stress in the thin films was nearly equi-biaxial tension. The magnitude of the tensile residual stress decreased with increasing film thickness.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 39: Forty-Fourth Annual Conference on Applications of X-ray Analysis, July 31 - August 4, 1995 , 1995 , pp. 267 - 279
Copyright
Copyright © International Centre for Diffraction Data 1995

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