Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-27T04:57:11.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Residual Stress in Thin Films of Aluminum/Hafnium

Published online by Cambridge University Press:  06 March 2019

S. J. Rant ,
C. C. Goldsmith  and
I. C. Noyan
S. J. Rant
Affiliation:
IBM Technology Products Division Hopewell Junction, NY 12533
C. C. Goldsmith
Affiliation:
IBM Technology Products Division Hopewell Junction, NY 12533
I. C. Noyan
Affiliation:
IBM Research Division - Thomas J. Watson Research Center Yorktown Heights, NY 10598
Get access

Abstract

Residual stresses in thin films are important technologically due to their impact on the reliability of these structures. Various techniques are used to measure these stresses, and the results of these techniques do not always agree. In some cases, formation of interphase stresses were postulated to account for such discrepancy, but no definitive microstructural analysis was given. In this study, the residual stress response of evaporated films of 9 1% Al - 9% Hf (atomic %) deposited on 0.4 mm thick (100) Si wafers was studied as a function of thermal treatment. The stresses were measured by radius of curvature and d vs. sin2ψ techniques. Concurrently, the microstructure evolution was tracked using powder diffraction and metallographic techniques. As previously reported in the literature, residual stresses were tensile in all cases for both techniques. However, as expected, the stress results from both techniques did not always agree. The delta between the residual stresses measured by the radius of curvature and d vs. sin2ψ techniques were found to correlate well with the development of a 2nd phase (metastable cubic Al3Hf).

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 37: Forty-Second Annual Conference on Applications of X-ray Analysis, August 2-6, 1993 , 1993 , pp. 157 - 165
Copyright
Copyright © International Centre for Diffraction Data 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Klokholm, E., Berry, B. S., “Intrinsic Stress in Evaporated Metal Films”, J. Electrochemical Society, Sol. State Sci, 115 823–826 (1968).Google Scholar
2. D'Heurle, F. M., Harper, J. M. E., “Note On the Origin of Intrinsic Stresses in Films Deposited via Evaporation and Sputtering”, Thin Solid Films, 171 81–92(1989)Google Scholar
3. D'Heurle, F. M., “Metallurgical Topics in Silicon Device Interconnections: Thin Film Stresses”, International Materials Reviews”, 34, 53–68 (1989).Google Scholar
4. Noyan, I. C., “Defining Residual Stresses in Thin Film Structures”, Adv. in X-Ray. Analysis, 35, (1992) 461–473 Google Scholar
5. Noyan, I. C., Goldsmith, C. C., “A Comparative Study of Stress Determination techniques in Polycrystalline Thin Films”, Adv. in X-ray Anal., 33 (1990) 137–144 Google Scholar
6. Davidenkov, N. N., “Measurement of Residual Stresses in Electrolytic Deposits,“ Sov. Phys.-Solid State 2, 2595–2598 (1961).Google Scholar
7. Hearn, E., “Stress Measurements in Thin Films Deposited on Single Crystal Substrates Through X-Ray Topography Techniques”, Adv. in X-Ray Analysis, Vol. 20, 1977.Google Scholar
8. Flinn, P. A., “Principles and Applications of Wafer Curvature Techniques for Stress Measurements in Thin Films”, MRS Syp. Proc, vol. 130, Bravman, J. C., et. al., eds, 41–51 (1989)Google Scholar
9. Timoshenko, S., “Analysis of Bi-metal Thermostats, J . Opt. Soc. Am., 11 233–255 (1925).Google Scholar
10. Townsend, P., Barnett, D. M., Brunner, T. A., “Elastic Relationships in Layered Composite Media with Approximation for the Case of Thin Films on a Thick Substrate”, J . Appl. Phys. 62, 4438–4444 (1987).Google Scholar
11. Nguyen, L. T. and Noyan, I. C., “Residual Stresses in Polymeric Passivation and Encapsulation Materials”, Polymer Engineering and Science, 28, (1988) 1026–1033 Google Scholar
12. Segmulier, A., Angilelo, J., LaPlaca, S. J., “Automatic X-Ray Diffraction Measurement of the Lattice Curvature of Substrate Wafers for the Determination of Linear Strain Patterns,” J . Appl. Phys. 51, 6224–6230 (1980).Google Scholar
13. Noyan, I. C. and Cohen, J. B., Residual Stress, Measurement by Diffraction and Interpretation, Springer, New York (1987).Google Scholar
14. Ball, R. K., Freeman, W. G., and Todd, A. G., “Thin Film Interaction of Aluminum and Hafnium: Influence of Copper and Silicon”, Thin Solid Films, 161 (1988), pp. 235–248.Google Scholar
15. Ryum, N., “Precipitation in an Al-1.78 wt % Hf Alloy after Rapid Solidification”, Journal of Materials Science, Vol. 10 (1975), pp. 2075–2081.Google Scholar
16. Hong, Q. Z., Lilienfeld, D. A., and Mayer, J. W., “Thermal and Ion-Induced, Metastable-cubic A13M Phases in Al-Ti and Al-Hf Thin Films”, J. Appl. Phys., Vol. 64 (9), 1988 pp. 4478–4483.Google Scholar
17. Brantley, W. A., “Calculated Elastic Constants for Stress Problems Associated with Semiconductor Devices”, J. App. Physics, Vol.44, 1973, pp. 533–535.Google Scholar
18. Hertzberg, R. W., “Deformation and Fracture Mechanics of Engineering Materials”, John Wiley and Sons, New York, 1976.Google Scholar