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Reciprocal Space Mapping of Epitaxial Materials Using Position-Sensitive X-ray Detection

Published online by Cambridge University Press:  06 March 2019

S. R. Lee ,
B. L. Doyle ,
T. J. Drummond ,
J. W. Medernach  and
P. Schneider Jr.
S. R. Lee
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185-1056
B. L. Doyle
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185-1056
T. J. Drummond
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185-1056
J. W. Medernach
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185-1056
P. Schneider Jr.
Affiliation:
Sandia National Laboratories Albuquerque, NM, 87185-1056
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Abstract

Reciprocal space mapping can be efficiently carried out using a position-sensitive x-ray detector (PSD) coupled to a traditional double-axis diffractometer. The PSD offers parallel measurement of the total scattering angle of all diffracted x-rays during a single rocking-curve scan. As a result, a two-dimensional reciprocal space map can be made in a very short time similar to that of a one-dimensional rocking-curve scan. Fast, efficient reciprocal space mapping offers numerous routine advantages to the x-ray diffraction analyst. Some of these advantages arc the explicit differentiation of lattice strain from crystal orientation effects in strain-relaxed heteroepitaxial layers; the nondestructive characterization of the size, shape and orientation of nanocrystalline domains in ordered-alloy epilayers; and the ability to measure the average size and shape of voids in porous epilayers. Here, the PSD-based diffractometer is described, and specific examples clearly illustrating the advantages of complete reciprocal space analysis are presented.

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 201 - 213
Copyright
Copyright © International Centre for Diffraction Data 1994

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References

[1] Heinke, H., Moller, M. O., Hommel, D. and Landwehr, G., J. Crystal Growth 135 (1994) 41.Google Scholar
[2] Kidd, P. and Fewster, P. F., Proceedings of the 1993 Fall Meeting of the Materials Research Society, Symposium B, Boston, MA., November 19 - December 3, 1993, (to be published).Google Scholar
[3] van der Sluis, P., Verheijen, M. J. and Haisma, J., Appl. Phys. Lett. 64 (1994) 3605.Google Scholar
[4] Horng, S. T., Goorsky, M. S., Madok, J. H. and Haegel, N. M., J. Appl. Phys. 76 (1994) 2066.Google Scholar
[5] Matyi, R. J., Melloch, M. R. and Woodall, J. M., Appl. Phys. Lett. 60 (1992) 2642.Google Scholar
[6] McL, A.. Mathieson, Acta Cryst. A38 (1982) 378.Google Scholar
[7] Thompson, L. R., Collins, G. J., Doyle, B. L. and Knapp, J. A., J. Appl. Phys. 70 (1991) 4760.Google Scholar
[8] Picraux, S. T., Doyle, B. L. and Tsao, J. Y., Chapter 3, Semiconductors and Semimetah 33 (AT&T, 1991) 139–222.Google Scholar
[9] Braun, M. GmbH, Technical data for detector Type-OED 50/R250 (1987).Google Scholar
[10] Pick, M. A., Bickmann, K., Pofahl, E., ZwoU, K. and Wenzl, H., J. Appl. Cryst. 10 (1977) 450.Google Scholar
[11] Welser, J., Hoyt, J. L. and Gibbons, J. F., IEEE Electron Device Lett. 15 (1994) 100.Google Scholar
[12] Fritz, I. J., Olsen, J. A., Howard, A. J., Brennan, T. M., Hammons, B. E. and Vawter, G. A., IEEE J. Quantum Electron. 30 (1994) 452.Google Scholar
[13] Warren, B. E., Chapter 3, X-Ray Diffraction (Addison-Wesley, 1969) 27–40.Google Scholar
[14] FoIIstaedt, D. M., Schneider, R. P. Jr., and Jones, E. D., Mat. Res. Soc, Symp. Proc. 326 (1994) 61.Google Scholar
[15] Medernach, J. W. and Headley, T. J. (private communication).Google Scholar
[16] Bensaid, A., Patrat, G., Brunei, M., de Bergevin, F. and Herino, R., Solid State Commun. 79 (1991) 923.Google Scholar