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Precise Cell Parameters of Semiconductor Crystals and their Applications

Published online by Cambridge University Press:  06 March 2019

E. D. Pierron  and
J. B. McNeely
E. D. Pierron
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
J. B. McNeely
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
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Abstract

A precise method for detenaining unit cell dimensions of semiconductor single crystals has been developed. An accuracy of ± 0.00002 Å and a precision of ± 0.00001 Å is achieved.

The method is used to determine variations in the cell parameter of GaAs as a function of surface defects, homogeneity across and along an ingot, evaluation of epitaxial layers, effects of heat treatments and structure defects induced by oxide diffusion masks on a substrate. The application of the technique to GaAsP alloys permit accurate and rapid study of sample composition and homogeneity.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 12: Seventeenth Annual Conference on Applications of X-ray Analysis, August 21-23, 1968 , 1968 , pp. 343 - 353
Copyright
Copyright © International Centre for Diffraction Data 1968

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References

1. Goldschmidt, V. M., “Geochemical Distribution Laws of the Elements, VIII. Research on the Structure and Properties of Crystal,” Skr. Akad. Oslo, 8: 34, 1926.Google Scholar
2. Giesecke, Von G. and Pfister, H., “prazisionsbestimmung der Gitterkonstanten von A3B5-Verbindungen,” Acta Cryst. 11: 369, 1958.Google Scholar
3. Ozolin'sh, J. V., Averkieva, G. K., Ievin'sh, A. F. and Gozyunova, N. A., “An X-Ray Study of some A3B5 Compounds which Display Deviation from Stoichiometxy,” Sov. Phys. Cryst. 7: 691, 1963.Google Scholar
4. Straumanis, M. E. and Kim, C. D., “Phase Extent of Gallium Arsenide Determined by the Lattice Constant and Density Method,’ Acta Cryst. 19: 256, 1965.Google Scholar
5. Bond, W. L., “precise Lattice Constant Determination,” Acta Cryst. 19: 814, 1960.Google Scholar
6. Londsdale, K., “International Tables: X-Ray Wavelength Values,” Acta Cryst. 19: 400, 1965.Google Scholar
7. Pierron, E. D., Parker, D. L. and McNeely, J. B., “Coefficient of Expansion of Gallium Arsenide from -62 to 200°C,” Acta Cryst. 21: 290, 1966.Google Scholar
8. Meieran, E. S. and Lemons, K. E., “A Study of Defects Due to Surface Processing in Silicon by Means of X-Ray Extinction Contrast Topography,” in W. M. Mueller, Editor, Advances in X-Ray Analysis, Vol. 8, Plenum Press, New York, 1965, p. 48–58.Google Scholar
9. Meieran, E. S., “Reflection X-Ray Topograph of GaAs Deposited on Ge,” J. Electrochem. Soc. 114: 292, 1967.Google Scholar