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Precise Cell Parameters of Semiconductor Crystals and their Applications

Published online by Cambridge University Press:  06 March 2019

E. D. Pierron  and
J. B. McNeely
E. D. Pierron
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
J. B. McNeely
Affiliation:
New Enterprise Division, Monsanto Company St. Louis, Missouri 63166
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Abstract

A precise method for detenaining unit cell dimensions of semiconductor single crystals has been developed. An accuracy of ± 0.00002 Å and a precision of ± 0.00001 Å is achieved.

The method is used to determine variations in the cell parameter of GaAs as a function of surface defects, homogeneity across and along an ingot, evaluation of epitaxial layers, effects of heat treatments and structure defects induced by oxide diffusion masks on a substrate. The application of the technique to GaAsP alloys permit accurate and rapid study of sample composition and homogeneity.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 12: Seventeenth Annual Conference on Applications of X-ray Analysis, August 21-23, 1968 , 1968 , pp. 343 - 353
Copyright
Copyright © International Centre for Diffraction Data 1968

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References

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