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Nondestructive Characterization of Multilayer Thin Films by X-ray Reflectivity

Published online by Cambridge University Press:  06 March 2019

T. C. Huang*
Affiliation:
IBM Research Division, Almaden Research Center 650 Harry RoadSan JoseCA 95120-6099, USA
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Abstract

The X-ray reflectivity technique was used to study the annealing effect on layer structure of Ta/FeMn/NiFe/Cu/NiFe/Ta multilayer thin films on Si substrates. High-resolution specular reflectivity data were collected and analyzed by least-squares refinement. Results on layer thickness, density and roughness were obtained and correlated with the magnetic properties of the films.

Type
III. Applications of Diffraction to Semiconductors and Films
Copyright
Copyright © International Centre for Diffraction Data 1994

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