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A New Nondestructive Quantitative Composition Depth Profiling Technique Based on X-Ray Excited Electron Emission

Published online by Cambridge University Press:  06 March 2019

L.A. Backaleinickov
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
S.G. Konnikov
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
K.Ju. Pogrebitsky
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
Y.N. Yuriev
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
A.A. Vereninov
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
R. Svagera
Affiliation:
Institut für Angewandte und Technische Physik Technisclie Universität Wien, Austria
R. Kaitna
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
G. Barnegg-Golwig
Affiliation:
A.F.Ioffe Physical-Technical Institute Academy Science USSR, St. Petersburg, Russia
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Abstract

The physical basis for x-ray induced secondary electron emission in the range of the absorption edges is described. Applications of this principle for nondestructive composition determination and for nanometer resolved quantitative composition depth profiling are illustrated. A new commercial type of scientific instrument is presented which can be used for this new technique, and for almost all methods that require x-ray photon beam probing.

All the methods described in this paper are based on the same phenomenon, chat is, the phenomenon of the jump-like increase of x-ray photoabsorption in the vicinity of the x-ray absorption edges of the chemical elements of the sample.

Type
XV. X-Ray Imaging and Tomography
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

1. Konnikov, S. G. and Pogrebitsky, K.Ju., Surf.Sci. 228,(1990) 532 10.1016/0039-6028(90)90370-NGoogle Scholar
2. Konnikov, S. G. et.al.,Best of Sov.Semicond. Phys. & Tech. (1991) 263Google Scholar
3. Alferov, Zh.I. et.al.,Best of Sov.Semicond Phys. & Tech, (1991) 305Google Scholar