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A Method for In-Situ Calibration of Semiconductor Detectors

Published online by Cambridge University Press:  06 March 2019

J. Wernisch ,
H.J. August  and
A. Lindner-Schbnthaler
J. Wernisch
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
H.J. August
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
A. Lindner-Schbnthaler
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
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Abstract

A method of semiconductor detector calibration by variation of the incidence angle of the x-radiation is discussed.

Type
XIII. XRS Techniques and Instrumentation
Information
Advances in X-Ray Analysis , Volume 35 , Issue B: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 1079 - 1081
Copyright
Copyright © International Centre for Diffraction Data 1991

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References

1. Baker, C. A., Batty, C. J. and Sakamoto, S., Nucl.Instr.Meth., A259, 501 (1987)10.1016/0168-9002(87)90832-1Google Scholar
2. Zaluzek, N. J., in: Introduction to Analytical Electron Microscopy, J.J.Hren, J.I.Goldstein and D.C.Joy, eds., Plenum Press, New York, 121 (1979)10.1007/978-1-4757-5581-7_4Google Scholar