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Low Energy X-Ray and Electron Absorption Within Solids (100-1500 ev Region)

Published online by Cambridge University Press:  06 March 2019

Burton L. Henke  and
Eric S. Ebisu
Burton L. Henke
Affiliation:
University of Hawaii, Honolulu, Hawaii 96822
Eric S. Ebisu
Affiliation:
University of Hawaii, Honolulu, Hawaii 96822
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Abstract

Quantitative analysis by x-ray fluorescence and photoelectron and Auger electron analysis can be effectively extended through a precise knowledge of the total aad subshell photoionization cross sections. Light element and intermediate element analysis, as based upon K and L series fluorescence respectively, involve x-ray interactions in the low energy region, Optimized analysis for essentially all the elements by x-ray induced photoelectron and Auger electron spectroscopy involves both x-ray and electron interactions in the low energy region. Unfortunately, theory and measurement for interaction cross sections in this 100-1500 eV region are difficult, particularly for the heavier elements. Nevertheless, recent advances in experimental and computerized-theoretical techniques for the determination of low energy interaction coefficients do permit establishing appreciatly more complete tabulations of cross sections than are currently available in this energy region.

In this paper, the types of interaction cross section data that are needed for quantitative x-ray and electron analysis are defined. Such data that are available from experiment and from theory are reviewed and compared. Some newer techniques for the measurement of cross sections are discussed. And finally, new “state of the art” tables are presented for the mass absorption coefficients of all of the elements and of some special laboratory materials. These are tabulated specifically for twenty-six of the most commonly applied characteristic wavelengths in the 8-110 A region and are based upon the best currently available theoretical and experimental data.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 17: Twenty-Second Annual Conference on Applications of X-ray Analysis, August 22-24, 1973 , 1973 , pp. 150 - 213
Copyright
Copyright © International Centre for Diffraction Data 1973

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References

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- Ederer, D. L. and Toraboulian, D. H., Phys. Rev. 133, A1525 (1964). [80-600 A; Ne]Google Scholar
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- Haensel, R.. et al., Solid State Comm. 7, 1495 (1969). [20-410 A; Ta, W, Re, Pt]Google Scholar
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- Tomboulian, D. H. and Bedo, D. E., Phys. Rev. 104, 590 (1956). [70-200 A; Si, Ge]Google Scholar
- Watson, W. S., J. Phys. B: Atom. Molec. Phys. 5, 2292 (1972). [58-200 A; He, Ne, Ar]Google Scholar
- Woodruff, R. W. and Givens, M. P., Phys. Rev. 97, 52 (1955). [100-400 A; Te]Google Scholar
- Wuilleumier, F., C. R. Paris Acad. Sc., 270B, 272 (1970). [8-15 A; Ne, Ar]Google Scholar
- Zimkina, T. M., et al., Sov. Phys. Solid State 9, 1128 (1967). [25-250 A; Sn, Te, Xe, La, Ce, Pr, M, Sm, Eu, Gd, Ho, Er, Tu, Ib, Lu]Google Scholar
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- Cooke, B. A. and Stewardson, E. A., Erit. J. Appl. Phys. 15, 1315 (1964). [7-17 A; Be, Mg, Al, Cu, Ag]Google Scholar
- Dhez, Pierre, Thesis, University of Paris, Orsay, Series A, No. 747, (March 1971). [50-310 A; Bi]Google Scholar
- Ederer, D. L. and Toraboulian, D. H., Phys. Rev. 133, A1525 (1964). [80-600 A; Ne]Google Scholar
- Ershov, O. A. and Lukirskii, A. P., Sov. Phys. Solid State 8, 1699 (1967). [60-140 A; Si, SiO]Google Scholar
- Fomichev, V. A. and Zhukova, I. I., Opt. and Spectrosc. 24, 147 (1968). [17.6-250 A; C]Google Scholar
- Gahwiller, Christian and Brown, Frederick C., Phys. Rev. B 2, 1918 (1970). [60-175 A; Al, Si, SiO]Google Scholar
- Haensel, R., et al., Applied Optics 7, 301 (1968). [50-340 A; Cu, Ag, Sn, Au, Bi]Google Scholar
- Haensel, R.. et al., Solid State Comm. 7, 1495 (1969). [20-410 A; Ta, W, Re, Pt]Google Scholar
- Jaegle, P., et. al., Phys. Rev., 188, 30 (1969). [20-130 A; Ta, Pt, Au, Bi]Google Scholar
- Jaegle, P., et al., Physics Letters 26A, 364 (1968). [20-140 A; Ta, Pt]Google Scholar
- Jaegle, P and Missoni, G., C. R. Acad, . Se. Paris, Series B, 262, 71 (1966). [26-120 A; Au]Google Scholar
- Jaegle, P., et. al., Phys. Rev. Lett. 18, 887 (1967). [25-85 A; Bi, Pb]Google Scholar
- Kyser, D. F., in G. Shinoda et. al., Editors, Proceedings of the Sixth International Conference on X-Ray Optics and Microanalysis, University of Tokyo Press (1972). [12-28 A; Ti, V, Cr, Mn, Fe, Co, Mi, Cu, Zn]Google Scholar
- Lukirskii, A. P., et al., Sov. Phys. Solid State 8, 1525 (1966). [25-250 A; Te, Sn, Pb, PbTe, SnTe]Google Scholar
- Sonntag, B and Haensel, R., Solid State Com. 7, 597 (1969). [40-310 A; Ti, V, Cr, Mn, Fe, Co, Ni ]Google Scholar
- Tomboulian, D. H. and Bedo, D. E., Phys. Rev. 104, 590 (1956). [70-200 A; Si, Ge]Google Scholar
- Watson, W. S., J. Phys. B: Atom. Molec. Phys. 5, 2292 (1972). [58-200 A; He, Ne, Ar]Google Scholar
- Woodruff, R. W. and Givens, M. P., Phys. Rev. 97, 52 (1955). [100-400 A; Te]Google Scholar
- Wuilleumier, F., C. R. Paris Acad. Sc., 270B, 272 (1970). [8-15 A; Ne, Ar]Google Scholar
- Zimkina, T. M., et al., Sov. Phys. Solid State 9, 1128 (1967). [25-250 A; Sn, Te, Xe, La, Ce, Pr, M, Sm, Eu, Gd, Ho, Er, Tu, Ib, Lu]Google Scholar
- Zimkina, T. M. and Lukirskii, A. P., Sov. Phys. Solid State 7, 1170 (1965). [23.6-190.3 A; KC1, KI RbCl, RbBr, RbI, CsCl,CsBr, CsI]Google Scholar