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LM-ACT for Imaging RAM Devices in X-ray Diffraction Topographs

Published online by Cambridge University Press:  06 March 2019

Warren T. Beard  and
Ronald W. Armstrong
Warren T. Beard
Affiliation:
Laboratory for Physical Sciences, College Park, HD 20
Ronald W. Armstrong
Affiliation:
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742
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Extract

Analysis of serai conductor material and associated integrated circuits (IC) is imperative for ensuring quality products. Currently, routine circuit testing is dominated by measurement of the optical and electrical material/device properties through final device performance and parametric testing.

Characterization of the crystal microstructure still is not considered a routine process test. Structural characterization usually is based on double-crystal rocking curves, x-ray topography, or a combination of these techniques.

Type
X. X-Ray Tomography, Imaging, and Topography
Information
Advances in X-Ray Analysis , Volume 32: Thirty-Seventh Annual Conference on Applications of X-ray Analysis, August 1-5, 1988 , 1988 , pp. 659 - 666
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

1. Chu, X. and Tanner, B.K., “Double Crystal X-ray Rocking Curves of Multiple Layer Structures, ” Semicond. Sci. Technol. 2:765 (1987).Google Scholar
2. Rozgonyi, G.A. and Miller, D., “X-ray Characterization of Stresses and Defects in Thin Films and Substrates,” in: Methods and Phenomena 2-Characterization of Epitaxial Semiconductor Films, Kressell, H. ed. , Elsevier Scientific Publishing Co. (1976), p, 185.Google Scholar
3. Qadri, S.B., Ma, D., and Peckerar, H., “Double-Crystal X-ray Topographic Determination of Local Strain in Metal-Oxide Semiconductor Device Structures,” Appl. Phys. Lett. 51:1827 (1987).Google Scholar
4. Barnett, S.J., Brown, G.T., and Tanner, B.K., “The Distribution of Lattice Strain and Tilt in LEC Semi-Insulating GaAs Measured by Double-Crystal X-ray Topography,” in: Inst. Phys. Conf. Ser. No. 87: Section 9 (1987), p. 615.Google Scholar
5. Boettinger, W.J., Burdette, H.E., Kuriyama, M., and Green, R.E. Jr. , “Asymmetric Crystal Topographic Camera,” Rev. Sci, Instrum. 47:906 (1976).Google Scholar
6. Beard, W.T., Ananthanarayanan, T.S., and Armstrong, R.W., “Line-Modified Asymmetric Crystal Topography (ACT) Technique,” in: 16th Symposium on Nondestructive Evaluation, Nondestructive Testing Information Analysis Center, Southwest Research Institute (1987), p. 23.Google Scholar
7. Newkirk, J.B., “The Observation of Dislocations and Other Imperfections by X-ray Extinction Contrast,” Trans. Metallurgical Soc. AIME 215: 431 (1959).Google Scholar
8. Bonse, U., “X-ray Picture of the Field of Lattice Distortions around Single Dislocations,” in: Direct Observations of Imperfections in Crystals,” Newkirk, J.B. and Wernick, J.H., eds. , John Wiley and Sons, New York (1961), p. 431.Google Scholar
9. Armstrong, R.W., “X-ray Diffraction Topography Description via the Stereographic Projection,” in: Applications of X-ray Topographic Methods to Materials Science,” Weissmann, S., Bali bar, F., and Petroff, J. -F., eds. , Plenum Press N.Y. (1984), p. 33.Google Scholar
10. Tanner, B.K. and Bowen, D.K., private communication, March, 1988.Google Scholar
11. Armstrong, R.W., “Laboratory Techniques for X-ray Reflection Topography,” in: Characterization of Crystal Growth Defects by X-ray Methods, Tanner, B.K. and Bowen, D.K., eds. , Plenum Press N.Y. (1980), p. 349.Google Scholar
12. Bragg, R.H. and Azaroff, L.V., “Direct Study of Imperfections in Nearly Perfect Crystals,” in: Direct Observations of Imperfections in Crystals, Newkirk, J.B. and Wernick, J.H., eds. , John Wiley and Sons, New York (1961), p. 415.Google Scholar