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LM-ACT for Imaging RAM Devices in X-ray Diffraction Topographs

Published online by Cambridge University Press:  06 March 2019

Warren T. Beard  and
Ronald W. Armstrong
Warren T. Beard
Affiliation:
Laboratory for Physical Sciences, College Park, HD 20
Ronald W. Armstrong
Affiliation:
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742
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Extract

Analysis of serai conductor material and associated integrated circuits (IC) is imperative for ensuring quality products. Currently, routine circuit testing is dominated by measurement of the optical and electrical material/device properties through final device performance and parametric testing.

Characterization of the crystal microstructure still is not considered a routine process test. Structural characterization usually is based on double-crystal rocking curves, x-ray topography, or a combination of these techniques.

Type
X. X-Ray Tomography, Imaging, and Topography
Information
Advances in X-Ray Analysis , Volume 32: Thirty-Seventh Annual Conference on Applications of X-ray Analysis, August 1-5, 1988 , 1988 , pp. 659 - 666
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

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