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High Resolution X-ray Diffraction Measurements of Strain Relaxed SiGe/Si Structures
Published online by Cambridge University Press: 06 March 2019
Abstract
Both double-crystal and triple-axis x-ray diffraction techniques have been used to study complex SiGe/Si structures. A novel method for measuring the nucleation activation energy of dislocations in strain relaxed SiGe/Si structures is presented to illustrate the usefulness of these techniques.
- Type
- III. Applications of Diffraction to Semiconductors and Films
- Information
- Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 181 - 193
- Copyright
- Copyright © International Centre for Diffraction Data 1994
References
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