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Published online by Cambridge University Press: 06 March 2019
X-ray scattering techniques at grazing incidence have been used to characterize single quantum well hetero–structures. Double–and triple-axis diffractometry has been used to determine lattice mismatch and layer thickness of a 250Å thick layer of AlInAs grown by MBE on an InP substrate and capped by a 45Å GaAs layer. Reflectivity measurements in the triple – crystal mode permit accurate measurement of individual layer thicknesses, relative electron density and interface roughnesses on the Angstrom level.