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Fundamentals of X-ray Spectrometric Analysis Using Low-Energy Electron Excitation

Published online by Cambridge University Press:  06 March 2019

K. J. Romand ,
F. Gaillard ,
M. Charbonnier  and
D. S. Urch
K. J. Romand
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I F-69622 Villeurbanne cedex, France
F. Gaillard
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I F-69622 Villeurbanne cedex, France
M. Charbonnier
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I F-69622 Villeurbanne cedex, France
D. S. Urch
Affiliation:
Department of Applied Chemistry and Chemical Engineering (CNRS, URA 417), Université Claude Bernard - Lyon I F-69622 Villeurbanne cedex, France
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Extract

In the field of material analysis and characterization interest has considerably shifted over the last few decades from bulk to surface and very thin film problems. At the present state a wide range of surface analytical techniques - such as x-ray photoelectron (XPS), Auger electron (AES), secondary ion mass (SIMS), ion scattering (ISS) spectroscopies - have become available but every one of them exhibits specific analytical features and information content. Within the context of this paper the main parameter to be considered is the information depth i.e the layer thickness from which the majority of information-bearing particles escape and hence are detected. For XPS and AES, this parameter is associated with the mean-free path of photoelectrans or Auger electrons and typically is in the range from 0.5 to 4 nm. In SIMS the ejected secondary ions are emitted from the outer 2 or 3 atomic layers (i.e. from about 1 nm) while the single-collision binary process occuring in ISS is restricted to atoms from the top most atomic layer (0.2-0.3 nm).

Type
III. Long-Wavelength X-Ray Spectrometry
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 105 - 121
Copyright
Copyright © International Centre for Diffraction Data 1990

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