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Fluorine Implantation and Residual Stresses in Polysilicon Films

Published online by Cambridge University Press:  06 March 2019

Lyan Lowry ,
Paul Zschack  and
Robert De Angelis
Lyan Lowry
Affiliation:
Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA 91109-8099
Paul Zschack
Affiliation:
ORISE-Brookhaven National Laboratory Upton, NY 11973-5000
Robert De Angelis
Affiliation:
University of Nebraska-Lincoln Center for Materials Research and Analysis Lincoln, NE 68588-0656
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Abstract

X-ray diffraction techniques were utilized to study the film stress effects in silicon wafers subjected to several processing conditions. The wafer processing matrix consisted of three thicknesses of polysilicon deposited on (100) silicon with a 25 nm layer of Si02. The polysilicon was doped with phosphorous and arsenic after which the samples were implanted with fluorine at 30 KeV at a dose of 6 × 1015 cm2. A synchrotron radiation source at Brookhaven National Laboratory on beamline X-14 was employed to determine the residual stresses in the polysilicon film by a powder diffraction technique ordinarily used on poly crystal line material X-ray rocking curve experiments were employed to determine the stress in the film from measurements of the curvature of the substrate. These two stress measurements allow the estimation of the stress gradient in the intermediate amorphous oxide layer. Correlations are made between the stress gradients, the fluorine distribution in the wafer and the electrical characteristics of the structures.

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 235 - 242
Copyright
Copyright © International Centre for Diffraction Data 1994

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