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Dynamical X-Ray Diffraction Simulations for Asymmetric Reflections for III-V Semiconductors Multilayers

Published online by Cambridge University Press:  06 March 2019

A. T. Macrander ,
D. W. Berreman  and
S. E. G. Slushy
A. T. Macrander
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
D. W. Berreman
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
S. E. G. Slushy
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Extract

A new matrix representation of the dynamical theory of x–ray diffraction which treats asymmetric reflections of coherent (i.e., pseudomorphic) epitaxial single crystal structures has been applied to III–V semiconductor multilayer structures. The laminar approximation is made, and Maxwell‘s equations are integrated in a 8 x 8 matrix form for the sublayers. Diffraction profiles from any multilayer can be obtained by multiplying the sublayer matrices. The method was used to simulate on a computer the intrinsic reflecting power of hypothetical structures in order to probe theoretical sensitivity limits for thin layers. We investigated [100] oriented structures consisting of single In ( l–x )Ga (x)As(l–y)P(y) quaternary (Q) layers on InP substrates as well as double heterostructures (DH‘s) consisting of a thin Q layer sandwiched between an InP substrate and an InP cladding layer.

Type
II. Characterization of Thin Films by XRD and XRF
Information
Advances in X-Ray Analysis , Volume 31: Thirty-Sixth Annual Conference on Applications of X-ray Analysis, August 3-7, 1987 , 1987 , pp. 167 - 173
Copyright
Copyright © International Centre for Diffraction Data 1987

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References

[1] Berreman, D. W. and Macrander, A. T., “Asymmetric X- ray Diffraction by Strained Crystal Wafers: 8 x 8 Ma trix Dynamical Theory” , to be published.Google Scholar
[2] Matsui, J., Onabe, K., Kamejima, T., and Hayashi, I., “ Lattice Mismatch Study of LPE-grown InGaPAs on (OOl)-InP Using X- ray Double-Crystal Diffraction” , J. Electrochem. Soc. 126, 664 (1979),Google Scholar
[3] Bartels, W.J., “Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer” , J. Vac. S d. Technol. Bl ,338 (1983).Google Scholar
[4] Macrander, A.T. and K. Strege, “ X- ray double crystal characterization of highly perfect InGaAs/InP grown by vapor-phase epitaxy” , J. Appl. Phys. 59, 442 (1986).Google Scholar