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Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

Published online by Cambridge University Press:  06 March 2019

P. M. Adams ,
J. F. Knudsen  and
R. C. Bowman Jr.
P. M. Adams
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
J. F. Knudsen
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
R. C. Bowman Jr.
Affiliation:
The Aerospace Corporation, Los Angeles, CA 90009 A D. Compaan, University of Toledo, Toledo, OH 43606 H. D. Yao, University of Nebraska, Lincoln, NE 68588
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Extract

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Type
XI. Thin Film and Semiconductor Characterization by X-Ray Diffraction
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 531 - 541
Copyright
Copyright © International Centre for Diffraction Data 1990

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References

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