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Determination of Zinc Sulfide and Cadmium Sulfide in Solid Solutions of Small Single Crystals Used for Semiconductors by X-Ray and Chemical Methods

Published online by Cambridge University Press:  06 March 2019

Frank L. Chan
Frank L. Chan*
Affiliation:
Aeronautical Research Laboratory, Wright-Patterson Air Force Base, Ohio
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Abstract

Single crystals of cadmium sulfide and zinc sulfide have been grown and studied intensively by the Solid State Physics group at the Aeronautical Research Laboratory. The physical phenomena such as reflection, transmission, ultraviolet-excited emission, and electrical resistivity have been observed and characterized on single crystals of these sulfides. Much interest concerning these phenomena has also been centered on single crystals containing both cadmium sulfide and zinc sulfide.

For research purposes, mixed crystals as small as a few tenths of 1 mg or less, to 0.5 g of the mixed sulfides, are being prepared. Special chemical methods are required to determine these constituents in them quantitatively. At times, these chemical methods are not applicable, since these methods invariably consume the sample, and, as a result, other observations on the same crystals cannot be performed.

Changes in lattice parameter in single crystals of mixed sulfides as compared to pure zinc sulfide or cadmium sulfide provide excellent means for the determination of the percentage of these sulfides. In the X-ray method, single crystals used for the determination of the lattice parameters remain intact. The equipment adopted, procedure used, and the data obtained are illustrated and discussed.

In the present study, crystals of cadmium sulfide (greenockite), alpha-zinc sulfide (wurtzite) and solid solutions of these two sulfides having a hexagonal unit cell were used. Since the lattice parameter a0 is found to follow Vegard's law, single-crystal rotation photographs described in this paper were obtained by rotating crystals around the c axis; the lattice parameter was determined with high precision by scanning along the zero-layer line with a microphotometer.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 5: Tenth Annual Conference on Applications of X-ray Analysis, August 7-9, 1961 , 1961 , pp. 142 - 152
Copyright
Copyright © International Centre for Diffraction Data 1961

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References

1. Burkhalter, T. S., “Analytical Chemistry of Semiconductors,” Anal. Chem., Vol. 33, No. 6, May 1961, pp, 21A-32A.Google Scholar
2. Reynolds, D. C., “Temperature Dependence of Edge Emission in Cadmium Sulfide,” Phys, Rev., Vol. 118, No. 2, 15 April, 1960. pp, 478–479.Google Scholar
3. Kroger, F. A., “Solid Solution in the Ternary System ZnS-CdS-MnS,” Z. Krist, Vol. 102A, 1940, pp. 132–135.Google Scholar
4. Vitrikhovskii, N. I. and Mizetskaya, I. B., “Mixed ZnS-CdS Monoerystals and Some of Their Properties,” “Soviet Physics—Solid State,” Vol. 2, No. 10, April, 1961.Google Scholar
5. Greene, L. C., Reynolds, D. C., Czyzak, S. J., and Baker, W. M., “Method for Growing Large CdS and ZnS Single Crystals,” J. Chem. Phys., Vol. 29, No. 6, December, 1958, pp. 1375–1380.Google Scholar
6. Greene, L. C. and Kingston, D. L., “Absorption Edge in Single Crystals of Alloys ZnS-CdS,” Bull. Am. Phys. Soc, Ser, II, Vol, 4, No. 3, March 30, 1959, p. 157.Google Scholar
7. Reynolds, D. C. and Greene, L. C., “Crystal Growth Mechanism in Cadmium Sulfide Crystals,” J. Appl. Phys., Vol. 29, No. 3, March, 1958, pp. 559–562.Google Scholar
8. Frerichs, R., “The Photoconductivity oi Incomplete Phosphors,” Phys. Rev., Vol. 72, 1947, p. 594.Google Scholar
9. Stanley, I. M., “Vapor Phase Crystallization of CdS,” J. Chem. Phys., Vol. 24, 1956, p. 1279.Google Scholar
10. Kordials, Richard, M.S. Thesis, Air Force Institute of Technology, U.S.A.F., August 1961.Google Scholar
11. Ross, James W., DeMars, Richard D., and Shain, Irving, “Analytical Application of the Hanging Mercury Drop Electrode,” Anal. Chem., Vol. 28, 1956, p. 1768.Google Scholar
12. Swanson, Howard E., Fuyat, Ruth K., and Ugrinic, George M., “Standard X-Ray Diffraction Powder Patterns,” Nat. Bur, Standards U.S. Circ. 539, Vol. IV, March 1955, p. 15.Google Scholar
13. Swanson, Howard E. and Fuyat, Ruth K., “Standard X-Ray Diffraction Powder Patterns,” Nat, Bur. Standards U.S. Circ. 539, Vol. II, June 15, 1953, p. 15.Google Scholar
14.“Anodic Stripping Voltammetry Using the Hanging Mercury Drop Electrode,” Anal. Chem., Vol. 29, 1957, p. 1825.Google Scholar
15. Ulrich, F. and Zachariasen, W., “Uber die Kristallstruktur des a- und p-CdS, sowie des Wurtzits,” Z. Krist., Vol. 62, 1925, pp. 260–273.Google Scholar
16. Shain, Irving and Lewison, John, “Stripping Analysis with Spherical Electrodes, “ Anal. Chem., Vol. 33, 1961, p. 187.Google Scholar
17. Mamantav, G., Papoff, P., and Delahay, P., “Anodic Stripping Voltammetry with Mercury Electrodes— Potential-step and Current-step Method,” J. Am. Chem. Sec., Vol. 79, 1957, p. 4034.Google Scholar
18. Chan, John P., Anderson, Philip D., Orr, Raymond L. and Hultgren, Ralph, Task Order Contract No. 15, Contract No, DA-04-200-ORD-17I, Mineral Research Laboratory. Institute of Engineering Research, University of California, Berkeley, California, Series No. 126, No. 4, October 1, 1959.Google Scholar
19. Shockley, W., Hollomon, J. H., Maurer, R., and Seicz, F., Imperfections in Nearly Perfect Crystals, John Wiley & Sons, Inc., New York, 1952.Google Scholar
20. Newkirk, J. B., *A Crystallographic Study of Mercuric Iodide,” Acta Met., Vol. 4, 1956, p. 3.Google Scholar
21. Lawson, W. D. and Nielsen, S., “Preparation of Single Crystals,” Semiconductor Monograph, Butterworths Scientific Publications, London, 1958.Google Scholar