Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T03:12:43.117Z Has data issue: false hasContentIssue false
  • English
  • Français

The Crystalline Perfection of Melt-Grown GaAs Substrates and Ga(As, P) Epitaxial Deposits

Published online by Cambridge University Press:  06 March 2019

J. K. Howard  and
R. H. Cox
J. K. Howard
Affiliation:
Texas Instruments Incorporated, Dallas, Texas
R. H. Cox
Affiliation:
Texas Instruments Incorporated, Dallas, Texas
Get access

Abstract

The preparation of semiconductor materials by epitaxial deposition has rapidly gained prominence in recent years. GaAs(1-x)Px alloys of variable composition, deposited on GaAs substrates, have been prepared in an open-tube reactor using H2, AsCl3, and PCl3 with GaAs source material, The deposits ranged in composition from GaAs to GaAs0.5P0.5 and were 10-30 microns thick.

X-ray diffraction topography was employed to evaluate the structural perfection of the monocrystalline GaAs substrates and the perfection of the deposited Ga(As, P) films. A scanning-reflection technique was developed to study the concentration, type, and spatial distribution of imperfections over large areas (∼8 cm2) to depths of 25 microns. Some areas of investigation included (1) the poly cry stallinity of some deposits, (2) the effect of substrate perfection on the film quality, (3) the depth of mechanically induced damage, and (4) the structural perfection of magnesium-diffused GaAs and Ga(As, P).

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 9: Fourteenth Annual Conference on Applications of X-ray Analysis, August 25-27, 1965 , 1965 , pp. 35 - 50
Copyright
Copyright © International Centre for Diffraction Data 1965

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Howard, J. K. and Dobrott, R. D., to be published.Google Scholar
2. Webb, W. W., “X-Ray Diffraction Topography,” in: J. B. Newkirk and J. H. Wemick (eds.) Direct Observation of Imperfections in Crystals, Intersciencc Publishers, Inc., New York, 1962, p. 29.Google Scholar
3. James, R. W., The Optical Principles of the Diffraction of X-Rays, Vol. II, Bell, London, 1958, P. 294.Google Scholar
4. Lang, A. R., “Studies of Individual Dislocations in Crystals by X-Ray Diffraction Microradiography,” J. Appl. Phys. 30: 1748, 1959.Google Scholar
5. Bonse, U., “Zur rontgenographischen Bestimmung des Typs einzelner Vefsetaungen in Emkristallen,” Z. Physik 153: 278-96, 1958.Google Scholar
6. Newkirk, J. B., “The Observation of Dislocations and Other Imperfections by X-Ray Extinction Contrast,” Trans. AIME 215: 483, 1959.Google Scholar
7. Williams, E. W., Cox, R. H., and Dobrott, R. D., to be published.Google Scholar
8. Finch, W. F. and Mehal, E. W., “Preparation of GaAsxP1-x by Vapor Phase Reaction,” J. Electrochem. Soc. 111: 815, 1964.Google Scholar
9. Gottlieb, G. E., “Vapor Phase Transport and Epitaxial Growth of GaAsi-jPz Using Water Vapor,” J. Electrochem. Soc. 112: 192-6, 1965.Google Scholar
10. Rubenstein, M., “The Preparation of Homogeneous and Reproducible Solid Solutions of GaP-GaAs,” J. Electrochem. Sac. 112: 426, 1965.Google Scholar
11. Antell, G. R., “Chlorine and Iodine as Impurities in InAs and GaP,” J. Appl. Phys. 31: 1686, 1960.Google Scholar
12. Ku, San-Mei, “The Preparation and Properties of Vapor-Grown GaAs-GaP Alloys,” J, Electrochem: Soc. 110: 991-5, 1963.Google Scholar
13. Hull, E. M., “Epitaxial Growth of Homogeneous Solid Solutions of GaAs-GaP,” J. Electrochem. Soc. 111 : 1295-6, 1964.Google Scholar
14. Abrahams, M. S., “Dislocation Etch Pits in GaAs,” J. Appl, Phys. 36: 3626, 1964.Google Scholar
15. Renniger, M., “Net Plane ‘Interferometry’ and Applications,” in: G. N. Ramachandran, Crystallography and Crystal Perfection, Academic Press, New York, 1963, p. 145.Google Scholar
16. Reisman, A. and Rohr, R., “Room. Temperature Chemical Polishing of Ge and GaAs,” J. Electrochem. Soc. 111 : 1425-8, 1964.Google Scholar
17. Dash, W. C., “Distorted Layers in Silicon Produced by Grinding and Polishing,” J. Appl. Phys. 29: 228-9, 1958.Google Scholar
18. Cheney, G. L., private communication.Google Scholar