Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-26T22:25:59.708Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Near Surface Layers by Means of Total Reflection X-Ray Fluorescence Spectrometry

Published online by Cambridge University Press:  06 March 2019

H. Schwenke ,
R. Gutschke  and
J. Knoth
H. Schwenke
Affiliation:
GKSS-Forschungszentrum, Institut für Physik Postfach 1160 W-2054 Geesthacht, Germany
R. Gutschke
Affiliation:
GKSS-Forschungszentrum, Institut für Physik Postfach 1160 W-2054 Geesthacht, Germany
J. Knoth
Affiliation:
GKSS-Forschungszentrum, Institut für Physik Postfach 1160 W-2054 Geesthacht, Germany
Get access

Abstract

Total Reflection X-ray Fluorescence Spectrometry (TXRF) has been used for the characterisation of a 20 nm thick Ni/Fe/Cr-layer on a silicon substrate. Instrumental aspects of the technique as well as the data evaluation procedure on the basis of modelling calculations are outlined in this paper. The effect of standing waves is discussed by means of the selected example. This particular layer serves also as an illustration of the capabilities and limitations of TXRF. At least three surface parameters are covered by the technique, elemental composition, density and layer thickness.

Type
XII. Total Reflection XRS
Information
Advances in X-Ray Analysis , Volume 35 , Issue B: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 941 - 946
Copyright
Copyright © International Centre for Diffraction Data 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Prange, A., “Total Reflection X-Ray Spectrometry: Method and Applications ”, Spectrochim, Acta, 44B: 437 (1989).Google Scholar
2. Eichinger, P., Rath, H. J. and Schwenke, H., “Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces”, 5. International Symposium on Semiconductor Processing, Santa Clara, CA (USA), (1988).Google Scholar
3. Weisbrod, U., Gutschke, R., Knoth, J. and Schwenke, H., “Total Reflection X-Ray Spectrometry for Quantitative Surface and Layer- Analysis”, Appl. Phys. A, in press.Google Scholar
4. Huang, T. C., “Thin-Film Characterization by X-Ray Fluorescence” X-Ray Spectrometry, 20: 29 (1991),Google Scholar