Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-05T05:06:45.691Z Has data issue: false hasContentIssue false

X-Ray Strain Measurements in IV-VI Semiconductor Super-Lattices at Low Temperature

Published online by Cambridge University Press:  06 March 2019

E.J. Fantner
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
H. Clemens
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
G. Bauer
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
Get access

Abstract

Multilayers composed of many thin films of PbTe and Pb1-xSnxTe on BaF2 substrates were grown epitaxially by hot-wall-vapor deposition. In order to investigate the fraction of the total misfit (2.5x10-3 at x=O, 12) accommodated by misfit strain we have performed strain measurements on these superlattices by two different X-ray diffractometer techniques. We also report on substrate induced strain due to different thermal expansion coefficients of films and substrate. For film thicknesses smaller than 300 nm there is clear evidence for almost complete accommodation of lattice mismatch by misfit strain. Below room temperature the substrate induces a tensile strain which is comparable to that of the misfit strain.

Type
II. X-Ray Strain and Stress Determination
Copyright
Copyright © International Centre for Diffraction Data 1983

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) van, J. H. der Merwe, On the stresses and energies associated with intercrystalline boundaries, Proc. Phys. Soc. A63:616(1950).Google Scholar
2) Matthews, J. W., and Blakeslee, A. E., Defects in epitaxial multilayers:Misfit dislocations, J. Cryst. Growth 27:118(1974).Google Scholar
3) Hilliard, J. E., Artificial layer structures and their properties, in:“Modulated Structures”, Cowley, J. M., Cohen, J. B., Salamon, M. B., and Wuensch, B. J., ed., American Institute of Physics, New York(1979).Google Scholar
4) Osbourn, G. C., Biefeld, R. M., and Gourley, P. L., A GaAs P1-x/GaP strained-layer superlattice, Appl. Phys. Left. 41:172(1982).Google Scholar
5) Horikoshi, Y., Kawashima, M. and Saito, H., PbSnSeTe-PbSeTe lattice matched double-heterostructure lasers, Jap. J. Appl. Phys. 21:77(1982).Google Scholar
6) Ludowise, M. J., Dietze, W. T., Lewis, C. R., Camras, M. D., Holonyak, N., Jr., Fuller, B. K., and Nixon, M. A., Continuous 300 K laser operation of strained super lattices, Appl. Phys. Lett. 42:487(1983).Google Scholar
7) Hearn, E. W., Stress measurements in thin films deposited on single crystal substrates through X-ray topography techniques, Adv. X-rayanalysis, 20:273(1977).Google Scholar
8) Estop, E., Izrael, A. and Souvage, M., Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs/AlxGa1-xAs, Acta Cryst. A32:627(1976).Google Scholar
9) Bartels, W. J. and Nijman, W., X-ray double-crystal diffracto metry of Ga1-xAlx As epitaxial layers, J. Cryst. Growth 44:518(1978).Google Scholar
10) Bohg, A., Measurements of stresses in thin films on single crystalline substrates, phys. stat. sol. (a) 46:445(1978).Google Scholar
11) Clemens, H., Fanliner, E. J., and Bauer, G., Hot wall epitaxy system for growth of multilayer IV-VI-compound heterostructures, Rev. Sci. Instr. 54:685(1983).Google Scholar
12) Ambrosch, K. E., Clemens, H., Fantner, E. J., Bauer, G., Kriechbaum, M. Kocevar, P., and Nicholas, R. J., Structural and electronic properties of PbTe/ Pb1-xSnxTe superlattices, Surf. Sci. (inprint).Google Scholar
13) Fantner, E. J., Ortner, B., Ruhs, W. and Lopez-Otero, A., Misfit strain in epitaxial IV-VI-semiconductor films Lecture Notes in Phys. 152:59(1981).Google Scholar
14) Ortner, B., Rontgenographische Spannurigsmessung an ein kristallinen Proben, in “Eigenspannungen (residual stresses)”, Deutsche Gesellschaftf. Metallkunde, ed. DGM, Karlsruhe(1983).Google Scholar
15) Matthews, J. W., Coherent interfaces and misfit dislocations, in” Epitaxial Growth” (PartB), Alper, A. H., Margrave, J. L., and Nowick, A. S., ed., Academic Press, New York (1975).Google Scholar
16) Partin, D. L., Growth of PbGeTe-thin film structures by molecular beam epitaxy, J. Vac. Sci. Techn. 21:1 (1982).Google Scholar