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X-Ray Strain Measurements in IV-VI Semiconductor Super-Lattices at Low Temperature

Published online by Cambridge University Press:  06 March 2019

E.J. Fantner ,
H. Clemens  and
G. Bauer
E.J. Fantner
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
H. Clemens
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
G. Bauer
Affiliation:
Institut für Physik, Mountanuniversität Leoben A-8700 Leoben, Austria
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Abstract

Multilayers composed of many thin films of PbTe and Pb1-xSnxTe on BaF2 substrates were grown epitaxially by hot-wall-vapor deposition. In order to investigate the fraction of the total misfit (2.5x10-3 at x=O, 12) accommodated by misfit strain we have performed strain measurements on these superlattices by two different X-ray diffractometer techniques. We also report on substrate induced strain due to different thermal expansion coefficients of films and substrate. For film thicknesses smaller than 300 nm there is clear evidence for almost complete accommodation of lattice mismatch by misfit strain. Below room temperature the substrate induces a tensile strain which is comparable to that of the misfit strain.

Type
II. X-Ray Strain and Stress Determination
Information
Advances in X-Ray Analysis , Volume 27: Thirty-Second Annual Conference on Applications of X-ray Analysis, August 1-5, 1983 , 1983 , pp. 171 - 178
Copyright
Copyright © International Centre for Diffraction Data 1983

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