Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-27T11:06:19.332Z Has data issue: false hasContentIssue false
  • English
  • Français

X-ray Rocking Curve Analysis of Strained Heterointerfaces and Quantum Wells

Published online by Cambridge University Press:  06 March 2019

C. R. Wie
C. R. Wie*
Affiliation:
State University of New York at Buffalo Department of Electrical and Computer Engineering 201 Bonner Hall, BuffaloNY 14260
Get access

Abstract

A detailed discussion is given for the x-ray rocking curve analysis of semiconductor heterointerfaces and strained quantum wells using x-ray interferometry. It is shown that for a single heteroepitaxiai layer sample and a multiple quantum well sample, the heterointerface where the composition changes in both anion and cation sublattices can be studied with a half monolayer sensitivity by analyzing the x-ray rocking curve profile. Such sample systems include GaInAs/InR InAs/GaSb, GalnP/GaAs, ZnSe/GaAs, etc. A simple kinematical diffraction principle involved in the x-ray analysis is explained. Namely, the relative phase difference between the reflection amplitudes of any two layers depends on the total sum of strain (or mismatch)-thickness products over the intervening layers and interfaces. The x-ray interferometry is also effective in measuring the strain-thickness product of strained quantum wells. Experimental data and analysis results are presented for a series of functional device structures having a strained quantum well. For a more complicated sampie structure which involves both a (strained) quantum-effect layer and strained interfaces, it is shown that the x-ray interferometry is only capable of providing the total strain-thickness product over the quantum layer and the surrounding interfaces, but no detailed information about the interface grading can be gained from the rocking curve analysis alone if onhy one isolated sample is measured. An experimental data of such a sample, 0.3μm-GaAs/100Å-GaInP/ GaAs(001), is analyzed.

Type
III. Applications of Diffraction to Semiconductors and Films
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 165 - 174
Copyright
Copyright © International Centre for Diffraction Data 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Halliwell, M., 43rd Annual Denver Conference on Applications of X-ray Analysis, Aug. 1-5, 1994, Steamboat Springs, CO, Paper No. D106. Paper in this Proceeding.Google Scholar
2. Fewster, P.F., Appl.Surf.Sci. 50 (1991) 9.Google Scholar
3. Lee, S., Doyle, B.L., Drummond, T.J., Medernach, J.W., and Schneider, R.P., 43rd Annual Denver Conference on Applications of X-ray Analysis, Aug. 1-5, 1994, Steamboat Springs, CO, Paper No. D59. Paper in this Proceeding.Google Scholar
4. C.R.Wie, Mater. Sci. Eng. Report: Review 13 (1994) 1.Google Scholar
5. Wie, C.R., J.Appl.Phys. 65 (1989) 1036.Google Scholar
6. Wie, C.R., Chen, J.C., Kim, H.M., Liu, P.L., Choi, Y.-W., and Hwang, D.M., Appl.Pkys. Lett, 55 (1989) 1774.Google Scholar
7. Tapfer, L. and Floog, K., Phys.Rev.B 40 (1989) 9802.Google Scholar
8. Green, G.S., Tanner, B.K., Bamett, S.J., Emeny, M., Pitt, A.D., Whitehouse, C.R., Clark, G.F., Phil.Mag.Lett. 62 (1990) 131.Google Scholar
9. Holloway, H., J.Appl.Phys. 67 (1990) 6229.Google Scholar
10. Tanner, B.K., J.Phys.D 26 (1993) A151.Google Scholar
11. Li, D., Gonsalves, L.M., Otsuka, N., Qui, J., Kobayashi, M., and Gunshor, R.L., Appl.Phys.Lett. 57 (1990) 449.Google Scholar
12. Note that a 10“4 background reflectivity (or a 4-orders-of-m.agmtude dynamic range) can be easily achieved in experimental data. If the background noise level is different in your experimental data, then this actual noise level must be added instead. The background noise level (in reflectivity) significantly affects the visibility of high-order fringe or superlattice peaks, and therefore it is important to know the incident x-ray intensity so that you can find the experimental background reflectivity from the detector count of the background noise level.Google Scholar
13. A (nearly) zero interface-strain can be found in a graded interface. For example, an interface structure such as —As-Ga-As.5P.5-GaIn-P— in the GaAs-GalnP interface gives a nearly zero interface-strain.Google Scholar
14. Giannini, C., Tapfer, L., Tournie, E., Zhang, Y.H., and Ploog, K.H., Appl.Phys.Lett. 62(1993) 149.Google Scholar
15. Wie, C.R. and Choi, Y.W., Appl.Phys.Lett. 58 (1991) 1077; and JAppl.Phys. 71 (1992) 1853.Google Scholar