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X -Ray Topography of Ion - Implanted Laser -Annealed Si

Published online by Cambridge University Press:  06 March 2019

R. D. Dragsdorf  and
C. P. Bhalla
R. D. Dragsdorf
Affiliation:
Kansas State University Department of Physics Manhattan, Kansas 66506 USA
C. P. Bhalla
Affiliation:
Kansas State University Department of Physics Manhattan, Kansas 66506 USA
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Extract

The introduction of various atoms into crystal surfaces by ion implantation has become common practice in the research laboratory and in many industrial processes. The deceleration of the introduced foreign ions during implantation results in extensive lattice damage. Atom displacement from equilibrium crystal sites and pile-up of the new atoms take place. The use of the pulsed laser for annealing these atomic defects in a single crystal is well documented . The absorption of the total energy in the laser pulse can be rapidly transferred to the lattice, approximately 10-9s, for an elevated temperature anneal of the damaged crystal. The photon energy of the monochromatic laser beam can be tailored so that the absorption of the radiation by a specific crystal can “be matched for its penetration into the crystal to that of the depth of the implanted atoms. A highly efficient mechanism is thus utilized to anneal just that portion of the crystal which is damaged by the impinging atoms of the implant.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 29: Thirty-Fourth Annual Conference on Applications of X-ray Analysis, August 5-9, 1985 , 1985 , pp. 381 - 386
Copyright
Copyright © International Centre for Diffraction Data 1985

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References

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