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Vacancy Related Defects in Antimony-Doped Silicon

Published online by Cambridge University Press:  06 March 2019

J. K. Howard  and
D. P. Miller
J. K. Howard
Affiliation:
Texas Instruments Incorporated Dallas, Texas
D. P. Miller
Affiliation:
Texas Instruments Incorporated Dallas, Texas
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Abstract

Helical dislocations and vacancy aggregates have been reported in lithiumdoped germanium and in diffused silicon. In the present study, defects related to an excess vacancy concentration are examined in as-grown silicon. X-ray topography, etch techniques, and Hall effect are used in determining the conditions of formation of these imperfections. Two distinct types of defects are observed: (1) helical dislocations and (2) dislocation loops. The helical dislocations are identified in the X-ray topographs and correlated to their etch figures. The diameters of the helices in various crystals range from less than 10 to 100 μ. The largest concentration of helices are observed in the initial growth, but prismatic loops or helical segments are also present in the low dislocation density regions of some crystals. The dislocation loop image consists of a pair of opposed arcs. The lengths of images vary from 30 to 400 μ, and the axis of the loop is usually parallel to <110> linage contrast changes with changes in sample orientation, but conclusive Burgers vector determinations are incomplete.

The formation of these defects is shown to be directly related to the heat treatment during crystal growth. The total acquisition of vacancies during growth is quite high and is attributed to the “orbital” growth process. In the “orbital” method, the seed check rotates 8-9 rpm about the center of the crucible as the growing crystal rotates 50-60 rpm. A linear relationship exists at room temperature between the vacancy concentration and the antimony impurity concentration. Impurity concentrations were determined independently by chemical and mass spectrograph techniques. A defect complex involving V− and Sb+ in thermal equilibrium is employed to explain this effect.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 7: Twelfth Annual Conference on Applications of X-ray Analysis, August 7-9, 1963 , 1963 , pp. 146 - 158
Copyright
Copyright © International Centre for Diffraction Data 1963

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References

1. Lang, A. R., “Studies of Individual Dislocations in Crystals by X-Ray Diffraction Micro-radiography,” J. Appl. Phys. 30: 1748, 1959.Google Scholar
2. Newkirk, J. B., “Method for the Detection of Dislocations in Silicon by X-Ray Extinction Contrast,” Phys. Rev. 110: 1465, 1958.Google Scholar
3. Schwuttke, G. H., “X-Ray Diffraction Microscopy of Impurities in Silicon Single Crystals by Extinction Contrast,” Direct Observation of Imperfections in Crystals, Interscience Publishers, New York, 1962, p. 497.Google Scholar
4. Jenkinson, A. E. and Lang, A. R., “X-Ray Diffraction Topographic Studies of Dislocations in Floating-Zone Grown Silicon,” ibid., p. 471.Google Scholar
5. Teal, G. K. and Little, J. B., “Growth of Germanium Single Crystals,” Pkys. Rev. 78: 647, 1949.Google Scholar
6. Miller, D. P., “A Single Crystal Orientor for the Philips Wide-Range Goniometer,” this volume, p. 314.Google Scholar
7. Dash, W. C., “Evidence of Dislocation Jogs in Deformed Silicon,” J. Appl. Phys. 29: 705, 1958.Google Scholar
8. Dash, W. C., “Growth of Silicon Crystals Free from Dislocation,” J. Appl. Phys, 30: 459, 1959.Google Scholar
9. Dauphinee, T. M. and E. Mooser, “Apparatus for Measuring Resistivity and Hall Coefficient of Semiconductors,” Rev. Sci. Instr. 26: 660, 1955.Google Scholar
10. Penning, P., “Generation of Imperfections in Germanium Crystals by Thermal Strain,” Philips Research Repts. 13: 79, 1951-52.Google Scholar
11. Dash, W. C., “The Observations of Dislocations in Silicon,” Dislocations and Mechanical Properties of Crystals, John Wiley & Sons, Inc., New York, 1956, p. 57.Google Scholar
12. Furuoya, T., “Dislocations in Silicon Single Crystals,” Japan. J. Appl. Phys. 1: 135, 1962.Google Scholar
13. Wagner, R. S., “Production of Dislocations in Germanium by Thermal Shock,” J. Appl. Phys. 29: 1679, 1958.Google Scholar
14. Amelinckx, S., Botinck, W., Dekeyser, W., and Seitz, F., “On the Formation and Properties of Helical Dislocations,” Phil. Mag. (Eighth Sec.) 2: 355, 1957.Google Scholar
15. Dash, W. C., “Gold-Induced Climb of Dislocations in Silicon,“J. Appl. Phys. 31: 2275, 1960.Google Scholar
16. Weltzin, R. A. and Swalin, R. A., “Defect Complexes and Lithium Precipitation in Germanium,” Naval Research Contract 710(27) Fourth Technical Report.Google Scholar
17. Yoshimatsu, M., Suzuki, T., Kobayashi, T., and Kohra, K., “Loop Shaped Images Observed in X-Ray Diffraction Micrographs of Silicon Single Crystals,” J. Pkys. Soc. Japan 17: 583, 1962.Google Scholar
18. Watkins, G. D. and Corbett, J. W., “Electron Paramagnetic Resonance of Defects in Irradiated Silicon,” Discussions Faraday Soc. 31: 86, 1961.Google Scholar
19. Hobstetter, J. N. and Renton, C. A., “Point Defects in P-Typc Germanium as Introduced by Deformation, Quenching, and Electron Bombardment,” J. Appl. Phys. 33: 600, 1962.Google Scholar
20. Sbockley, W. and Moll, J. L., “Solubility of Flaws in Heavily-Doped Semiconductors,” Phys. Rm. 119: 1480, 1960.Google Scholar
21. Brock, G. E. and Aliotta, C. F., “Direct Observation of Dislocation Loops in Arsenic-Doped Germanium,” I.B.M. Journal R. & D, July, p. 372.Google Scholar