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Trace Analysis by TXRF

Published online by Cambridge University Press:  06 March 2019

R. S. Hockett
R. S. Hockett*
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

Total reflection X-Ray FKiorescence (TXRF) originally was developed for trace analysis of small residues but has become a widespread method for measuring trace surface metal contamination on semiconductor substrates. It is estimated that approximately 100 TXRF instruments are in use in the semiconductor industry worldwide, and approximately half that for residue analysis in analytical laboratories. TXRF instrumentation is available today for reaching detection limits of the order of 109 atoms/cm2. This review emphasizes some of the more recent developments in TXRF for trace analysis, in particular with the use of synchrotron x-ray sources (SR-TXRF). There is some promise of reaching 107 atoms/cm2 detection limits for surface analysis of semiconductor substrates.

Type
IX. XRS Mathematical Methods, Trace Analysis and Other Applications
Information
Advances in X-Ray Analysis , Volume 38: Forty-third Annual Conference on Applications of X-ray Analysis , 1994 , pp. 687 - 690
Copyright
Copyright © International Centre for Diffraction Data 1994

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References

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