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Total Reflection X-Ray Fluorescence Spectroscopy: Analysis Of Gaas And InGaAs

Published online by Cambridge University Press:  06 March 2019

Leigh Ann Filcs-Sesler ,
Don Plumton ,
Yung-Chung Kao  and
Tae S. Kim
Leigh Ann Filcs-Sesler
Affiliation:
Texas Instruments P.O. Box 655936, MS 147 Dallas, Texas 75265
Don Plumton
Affiliation:
Texas Instruments P.O. Box 655936, MS 147 Dallas, Texas 75265
Yung-Chung Kao
Affiliation:
Texas Instruments P.O. Box 655936, MS 147 Dallas, Texas 75265
Tae S. Kim
Affiliation:
Texas Instruments P.O. Box 655936, MS 147 Dallas, Texas 75265
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Abstract

This article explores applications of total reflection x-ray fluorescence (TRXRF) to GaAs processes. The applications include determination of surface contamination and InGaAs layer thicknesses. Surface contamination can deteriorate device performance and can occur in starting substrates and in subsequent processing. We demonstrate that TRXRF is a quick, nondestructive method for identifying sulfur contamination on incoming wafers and low levels of metallic impurities from device fabrication. Variable angle TRXRF has been used to determine heterostmeture film thickness, measuring films of InGaAs on GaAs as thin as 4 nm.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 37: Forty-Second Annual Conference on Applications of X-ray Analysis, August 2-6, 1993 , 1993 , pp. 585 - 593
Copyright
Copyright © International Centre for Diffraction Data 1993

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