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Structural Analysis of X-ray Diffraction Peaks of Thin Film Gallium Arsenide

Published online by Cambridge University Press:  06 March 2019

E. J. Charlson ,
D. H. Hu  and
M. R. Farukhi
E. J. Charlson
Affiliation:
Electrical Eng. Dept., Univ. of Missouri
D. H. Hu
Affiliation:
Electrical Eng. Dept., Univ. of Missouri
M. R. Farukhi
Affiliation:
Electrical Eng. Dept., Univ. of Missouri
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Abstract

A least-squares polynomial approximation of the Warren-Averbach Fourier coefficients line broadening analysis has shown flash-evaporated GaAs films to be characterized by De(lll) ≤ 400 Å and >εL2<½ ⋍ 0.002. Though twinning is the dominant faulting mechanism, a considerable amount of single and double deformation stacking faults are also present. Growth under a partial pressure of arsenic and tin has enhanced crystallite size by a factor of four.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 14: Nineteenth Annual Conference on Applications of X-ray Analysis, August 5-7, 1970 , 1970 , pp. 441 - 452
Copyright
Copyright © International Centre for Diffraction Data 1970

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References

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