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Residual Stress Measurement of Silicon Nitride and Silicon Carbide by X-Ray Diffraction Using Gaussian Curve Method

Published online by Cambridge University Press:  06 March 2019

Masanori Kurita ,
Ikuo Ihara  and
Nobuyuki Ono
Masanori Kurita
Affiliation:
Nagaoka University of Technology Kamitomioka, Nagaoka, 940-21, Japan
Ikuo Ihara
Affiliation:
Nagaoka University of Technology Kamitomioka, Nagaoka, 940-21, Japan
Nobuyuki Ono
Affiliation:
Citizen Watch Co. Shinjuku-ku, Tokyo, 163, Japan
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Extract

The residual stress induced by grinding or some thermal treatment has a large effect on the strength of ceramics. The X-ray technique can be used to nondestructively measure the residual stress in small areas on the surface of polycrystalline materials. The X-ray stress measurement is based on. the continuum mechanics for macroscopically isotropic polycrystalline materials. In this method, the stress value is calculated selectively from strains of a particular diffraction plane in the grains which are favorably oriented for the diffraction. In general, however, the elastic constants of a single crystal depend on the plane of the lattice, since a single crystal is anisotropic, The behavior of the deformation of individual crystals in the aggregate of polycrystalline materials under applied stress has not yet been solved successfully. Therefore, the stress constant and elastic constants for a particular diffracting plane should be determined experimentally in order to determine the residual stress accurately by X-ray diffraction.

Type
VII. X-Ray Stress Analysis
Information
Advances in X-Ray Analysis , Volume 32: Thirty-Seventh Annual Conference on Applications of X-ray Analysis, August 1-5, 1988 , 1988 , pp. 459 - 469
Copyright
Copyright © International Centre for Diffraction Data 1988

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References

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