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Oxygen Concentration Determination in Silicon Single Crystals by Precision Lattice Parameter Measurement

Published online by Cambridge University Press:  06 March 2019

H. Ohmori ,
M. Tomita ,
N. Tsuchiya  and
Y. Matsushita
H. Ohmori
Affiliation:
Toshiba RSD Center Komukai Toshiba-cho, Saiwai-ku Kawasaki, Kanagawa 210, Japan
M. Tomita
Affiliation:
Toshiba RSD Center Komukai Toshiba-cho, Saiwai-ku Kawasaki, Kanagawa 210, Japan
N. Tsuchiya
Affiliation:
Semiconductor group, Toshiba Corp. Horikawa—cho, Saiwai—ku Kawasaki, Kanagawa 210, Japan
Y. Matsushita
Affiliation:
Semiconductor group, Toshiba Corp. Horikawa—cho, Saiwai—ku Kawasaki, Kanagawa 210, Japan
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Abstract

Precision lattice parameter measurement by the X-ray diffraction method of Bond [1] has been examined as a substitutional method for IR in determining the oxygen concentration in silicon single crystals. Asymmetric 444 CuKai reflections were measured for undoped (100) oriented silicon wafers to obtain the correlation curve between the silicon lattice parameter and oxygen concentration. Precise adjustment of the optical system and computer fitting in determining the peak position allow a minute lattice dilation of silicon due to oxygen to be detected by the Bond method. The precision of this measurement system was of the order of 10-6. The lattice expansion of silicon by dissolved oxygen was determined to be at the rate of 3.2X10-24 atoms of oxygen per cm3. Furthermore, the oxygen concentrations of heavily Sb-doped silicon wafers were determined nondestructively.

Type
XI. Thin Film and Semiconductor Characterization by X-Ray Diffraction
Information
Advances in X-Ray Analysis , Volume 34: Thirty-Ninth Annual Conference on Applications of X-ray Analysis, July 30 - August 3, 1990 , 1990 , pp. 577 - 586
Copyright
Copyright © International Centre for Diffraction Data 1990

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References

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