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The Measurement of Triaxial Residual Stress in Polymer-Coated Aluminum Circuitry in Microchip Modules

Published online by Cambridge University Press:  06 March 2019

Cyrus E. Crowder ,
Michael J. Radler  and
Paul Townsend
Cyrus E. Crowder
Affiliation:
Analytical Sciences, 1897G Bldg; Central Research Materials Science and Testing, 1702 Bldg; Central Research Electronics, 1712 Bldg The Dow Chemical Company, Midland, MI 48667
Michael J. Radler
Affiliation:
Analytical Sciences, 1897G Bldg; Central Research Materials Science and Testing, 1702 Bldg; Central Research Electronics, 1712 Bldg The Dow Chemical Company, Midland, MI 48667
Paul Townsend
Affiliation:
Analytical Sciences, 1897G Bldg; Central Research Materials Science and Testing, 1702 Bldg; Central Research Electronics, 1712 Bldg The Dow Chemical Company, Midland, MI 48667
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Extract

The development of high density interconnection (HDI) technology in multichip modules (MCM's) will establish a new level in the hierarchy of electronic systems. The modules use organic insulating layers which, because of their low dielectric permittivity and loss, enable circuits with maximum density and speed. However, differences in the coefficients of thermal expansion (CTE's) for the insulating layers, the interconnects, and the substrates, produce residual stresses in the various components during processing. These stresses must be understood to engineer reliable designs for MCM's.

Type
V. X-Ray Characterization of Thin Films
Information
Advances in X-Ray Analysis , Volume 36: Forty-First Annual Conference on Applications of X-ray Analysis, August 3-7, 1992 , 1992 , pp. 231 - 236
Copyright
Copyright © International Centre for Diffraction Data 1992

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References

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