Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-23T14:49:05.495Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Semiconductor Heterostructures by White Beam Synchrotron X-Ray Topography in Grazing Bragg-Laue and Conventional Bragg Geometries

Published online by Cambridge University Press:  06 March 2019

G.-D. Yao ,
J. Wu ,
T. Fanning  and
M. Dudley
G.-D. Yao
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
J. Wu
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
T. Fanning
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
M. Dudley
Affiliation:
Department of Materials Science & Engineering SUNY at Stony Brook, Stony Brook, NY 11794-2275
Get access

Abstract

White beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific case was (355), is governed by kinernatical theory. This is justified by comparing dislocation contrast and visibility with the extent of the calculated effective misorientalion field in comparison to the effective X-ray penetration depth. For the case of Cd1-xZnxTe, twin configurations are observed, and their analysis is presented.

Type
IV. Lattice Defects and X-Ray Topography
Information
Advances in X-Ray Analysis , Volume 35 , Issue A: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 247 - 253
Copyright
Copyright © International Centre for Diffraction Data 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fang, S.F., Adomi, K., Iyer, S., Morkoc, H., Zabei, H., Choi, C. and Otsuka, N.. J. Appl. Phys., 68(7), R31, (1990).Google Scholar
2. Bell, S.L. and Sen, S.. J. Vac. Sci. Techno I. A, 3(1), 112, (1985).Google Scholar
3. Yao, G.-D., Dudley, M., and Wu, J.. J. X-Ray Sci. & Tech., 2, 195, (1990).Google Scholar
4. Petroff, J.F. and Sauvage, M.. J. Cryst. Growth, 43,628, (1978).Google Scholar
5. Yao, G.-D., Dudley, M., Hon, S.Y., ar.d R. DiSalvo. Nucl. Inst. & Metk., B56/57, 400, (1991).Google Scholar
6. Mil, J.E.A. tat and Bowen, D.K.. J. Appl. Cryst., 8, 657, (1975).Google Scholar
7. Yao, G.-D., Wu, J., Dudley, M., Shastry, V., and Anderson, P.. Mat. Res. Soc. Symp. Proc, 209, 707, (1991).Google Scholar